公开(公告)号：US20140224765A1

公开(公告)日：2014-08-14

申请号：US14210803

申请日：2014-03-14

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Shin-ya NAKAFUJI ,  Takanori NAKANO

IPC: B44C1/22

CPC classification number: B44C1/227 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0335 ,  H01L21/0337

Abstract: A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括基础组分和交联剂。 抗蚀剂下层膜中的氢原子的含量为0〜50原子％。 交联剂具有由以下通式（i）表示的部分结构。 X表示氧原子，硫原子或-NR-。 R表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。 n1为1〜6的整数.R1表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。

公开(公告)号：US20130341304A1

公开(公告)日：2013-12-26

申请号：US14011781

申请日：2013-08-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Kazuhiko KOMURA ,  Shin-ya NAKAFUJI ,  Takanori NAKANO

IPC: G03F7/09 ,  G03F7/34

CPC classification number: G03F7/09 ,  C08F220/18 ,  C08L61/06 ,  C08L61/12 ,  G03F7/094 ,  G03F7/34 ,  H01L21/0271 ,  H01L21/31144

Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Abstract translation: 抗蚀剂下层膜形成组合物包括玻璃化转变温度（Tg）为0-180℃的聚合物。抗蚀剂下层膜形成组合物用于多层抗蚀剂工艺。 多层抗蚀剂工艺包括在抗蚀剂下层膜的表面上形成硅基氧化物膜，并对硅基氧化物膜进行湿蚀刻。

公开(公告)号：US20180114698A2

公开(公告)日：2018-04-26

申请号：US14955473

申请日：2015-12-01

Applicant: JSR Corporation

Inventor： Shin-ya NAKAFUJI ,  Goji WAKAMATSU ,  Tsubasa ABE ,  Kazunori SAKAI

IPC: H01L21/308 ,  C08G65/40 ,  H01L21/027 ,  H01L21/306

CPC classification number: C08G65/4043 ,  C08G65/40 ,  C08G65/4031 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

公开(公告)号：US20140272722A1

公开(公告)日：2014-09-18

申请号：US14290744

申请日：2014-05-29

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Kazuhiko KOMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/038 ,  B05D3/02

CPC classification number: G03F7/0384 ,  B05D3/0254 ,  C08G65/4006 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式（1）表示的结构单元的聚合物。 Ar 1，Ar 2，Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1，Ar 2，Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基，醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

公开(公告)号：US20140014620A9

公开(公告)日：2014-01-16

申请号：US13714406

申请日：2012-12-14

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Kazuhiko KOUMURA ,  Yuushi MATSUMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/091 ,  H01L21/0276

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract translation: 用于形成抗蚀剂下层膜的树脂组合物包括具有芳环的树脂和具有由下式（i）表示的部分结构的交联剂。 X表示氧原子，硫原子，* -COO-或-NRA-。 R1表示氢原子或C1-30一价烃基。 R2表示羟基，磺胺基，氰基，硝基，C1-30一价烃基，C1-30一价羟基烃基或C1-30一价硫代烃基。 p为1〜3的整数。

公开(公告)号：US20210157235A1

公开(公告)日：2021-05-27

申请号：US17163675

申请日：2021-02-01

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Hiroki NAKATSU ,  Tomoaki TANIGUCHI ,  Tomohiro ODA

IPC: G03F7/11 ,  C08G61/10 ,  G03F7/20 ,  G03F7/075

Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

公开(公告)号：US20200348595A1

公开(公告)日：2020-11-05

申请号：US16947119

申请日：2020-07-20

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Kengo EHARA ,  Tomoaki TANIGUCHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C07D209/50 ,  C07D471/06 ,  C07C233/65 ,  C07D251/54 ,  C07D405/14

Abstract: A composition contains: a compound including at least one group selected from the group consisting of a group represented by formula (1-1), a group represented by formula (1-2), and a group represented by formula (1-3); and a solvent. In formulae (1-1) to (1-3), * and ** each denote a site bonding to a part other than the group represented by the formulae (1-1) to (1-3) in the compound; and a and b are each independently an integer of 0 to 3. In a case in which a is 0, b is no less than 1, and in a case in which a is no less than 1, b is 0.

公开(公告)号：US20150198882A9

公开(公告)日：2015-07-16

申请号：US14290744

申请日：2014-05-29

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Kazuhiko KOMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/038 ,  B05D3/02

CPC classification number: G03F7/0384 ,  B05D3/0254 ,  C08G65/4006 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式（1）表示的结构单元的聚合物。 Ar 1，Ar 2，Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1，Ar 2，Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基，醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

公开(公告)号：US20160011512A1

公开(公告)日：2016-01-14

申请号：US14862352

申请日：2015-09-23

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Fumihiro TOYOKAWA ,  Gouji WAKAMATSU ,  Yoshio TAKIMOTO ,  Katsuhisa MIZOGUCHI ,  Takashi OKADA ,  Takaaki UNO ,  Takeshi ENDO ,  Masaki MORITSUGU

IPC: G03F7/11 ,  G03F7/36 ,  H01L21/02 ,  C08G65/38 ,  C09D171/00 ,  G03F7/16 ,  C07C255/54

CPC classification number: G03F7/11 ,  C07C255/54 ,  C07D493/10 ,  C08G65/38 ,  C08G65/40 ,  C09D171/00 ,  C09D171/10 ,  G03F7/094 ,  G03F7/16 ,  G03F7/36 ,  H01L21/02118

Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.

Abstract translation: 组合物包括包含由式（1）表示的部分结构的化合物和溶剂。 在式（1）中，X 1和X 2各自独立地表示与X 1或X 2相邻的与环碳原子一起构成的具有4〜10个环原子的取代或未取代的环结构。 n1和n2各自独立地为0〜2的整数， k1和k2的和各自独立地为1〜8的整数，其中k1和k2之和不小于2且不大于16.该化合物优选由式（2）表示。 式（1）中的k1和k2之和优选为3以上。

公开(公告)号：US20140048512A1

公开(公告)日：2014-02-20

申请号：US14061808

申请日：2013-10-24

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Shin-ya MINEGISHI ,  Takanori NAKANO

IPC: G03F7/09 ,  B44C1/22

CPC classification number: G03F7/091 ,  B44C1/227 ,  C08G8/20 ,  C08G61/02 ,  C08G2261/314 ,  C08G2261/332 ,  C08G2261/90 ,  G03F7/094 ,  G03F7/30 ,  G03F7/36

Abstract: A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. R1 represents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. R2 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms. R3 represents an alicyclic group having 4 to 20 carbon atoms or an arylene group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the arylene group represented by R3 are unsubstituted or substituted.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由下式（1）表示的重复单元的聚合物和溶剂。 R1表示羟基等。 n为0〜5的整数.X表示碳原子数1〜20的二价烃基或碳原子数1〜20的烷二氧基。 m为1〜7的整数.m和n之和为7以下。R2为单键或碳原子数1〜4的烷二基。 R 3表示碳原子数4〜20的脂环式基或碳原子数6〜30的亚芳基。 包含在脂环族基团中的部分或全部氢原子或由R3表示的亚芳基是未取代的或取代的。