- 专利标题: CHARGE STORAGE DEVICE, METHOD OF MAKING SAME, METHOD OF MAKING AN ELECTRICALLY CONDUCTIVE STRUCTURE FOR SAME, MOBILE ELECTRONIC DEVICE USING SAME, AND MICROELECTRONIC DEVICE CONTAINING SAME
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申请号: US15163798申请日: 2016-05-25
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公开(公告)号: US20160268065A1公开(公告)日: 2016-09-15
- 发明人: Donald S. Gardner , Eric C. Hannah , Rong Chen , John L. Gustafson
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01G11/86
- IPC分类号: H01G11/86 ; H01G11/24 ; H01G11/52
摘要:
In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
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