公开(公告)号：US09093226B2

公开(公告)日：2015-07-28

申请号：US13621354

申请日：2012-09-17

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Wei Jin ,  Zhaohui Chen ,  Charles W. Holzwarth ,  Cary L. Pint ,  Bum Ki Moon ,  John L. Gustafson

IPC: H01G9/00 ,  H01G11/26 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L49/02

CPC classification number: H01G11/26 ,  H01G9/0029 ,  H01G11/04 ,  H01G11/30 ,  H01G11/86 ,  H01L28/82 ,  Y02E60/13 ,  Y10T29/417

Abstract: An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).

Abstract translation: 能量存储装置包括包括第一多个通道（111,512）的第一电极（110,510），第一电极包含第一电解质（150,514）和包括第二多个通道的第二电极（120,520） 121,522），其包含第二电解质（524）。 第一电极具有第一表面（115,511），第二电极具有第二表面（125,521）。 第一和第二电极中的至少一个是多孔硅电极，并且第一表面和第二表面中的至少一个包括钝化层（535）。

公开(公告)号：US20160268065A1

公开(公告)日：2016-09-15

申请号：US15163798

申请日：2016-05-25

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Eric C. Hannah ,  Rong Chen ,  John L. Gustafson

IPC: H01G11/86 ,  H01G11/24 ,  H01G11/52

CPC classification number: H01G11/86 ,  H01G2/02 ,  H01G9/048 ,  H01G11/24 ,  H01G11/26 ,  H01G11/36 ,  H01G11/52 ,  H01G11/54 ,  H01L28/82 ,  Y02E60/13

Abstract: In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.

公开(公告)号：US10777366B2

公开(公告)日：2020-09-15

申请号：US15936427

申请日：2018-03-26

Applicant: Intel Corporation

Inventor： Donald S. Gardner ,  Zhaohui Chen ,  Wei C. Jin ,  Scott B. Clendenning ,  Eric C. Hannah ,  Tomm V. Aldridge ,  John L. Gustafson

IPC: H01G11/26 ,  H01G11/86 ,  H01G11/58 ,  H01G11/14 ,  H01G11/30

Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.