发明申请
- 专利标题： SEMICONDUCTOR DEVICES INCLUDING A CAPPING LAYER
- 专利标题（中）： 包括封装层的半导体器件
-
申请号： US15155539申请日： 2016-05-16
-
公开(公告)号： US20160293547A1公开(公告)日： 2016-10-06
- 发明人: Sangho Rha , Jongmin Baek , Wookyung You , Sanghoon Ahn , Nae-In Lee
- 申请人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2013-0091685 20130801
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L23/522 ; H01L21/321 ; H01L21/02 ; H01L21/288 ; H01L23/532 ; H01L21/768
摘要：
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.
公开/授权文献
- US09711453B2 Semiconductor devices including a capping layer 公开/授权日：2017-07-18
信息查询
IPC分类:
