公开(公告)号：US09748170B2

公开(公告)日：2017-08-29

申请号：US15146112

申请日：2016-05-04

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Naein Lee

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/764

CPC分类号： H01L23/5226 ,  H01L21/764 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/00 ,  H01L2924/0002

摘要： A semiconductor device includes a substrate, a plurality of first conductive patterns disposed on the substrate and a plurality of second conductive patterns disposed on the first conductive patterns. Respective air gaps are disposed between adjacent ones of the first conductive patterns overlying a first region of the substrate, while adjacent ones of the first conductive patterns overlying a second region of the substrate do not have air gaps disposed therebetween. The air gaps may include first air gaps, and the device may further include second air gaps disposed between adjacent ones of the second conductive patterns in the second region. Adjacent ones of the second conductive patterns overlying a second region of the substrate may not have air gaps disposed therebetween.

公开(公告)号：US09558994B2

公开(公告)日：2017-01-31

申请号：US15205168

申请日：2016-07-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Wookyung You ,  Sanghoon Ahn ,  Sangho Rha ,  Jongmin Baek ,  Nae-In Lee

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.

摘要翻译： 一种半导体器件包括：包括第一区域和第二区域的衬底;第一导电图案，设置在第一区域上并且彼此间隔开第一距离;第二导电图案，设置在第二区域上并且彼此间隔开 第二距离大于第一距离，以及层间绝缘层，设置在第二导电图案之间并且包括具有对应于第一距离的宽度的至少一个凹部区域。

公开(公告)号：US10269712B2

公开(公告)日：2019-04-23

申请号：US15927270

申请日：2018-03-21

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Nae-In Lee

IPC分类号： H01L23/528 ,  H01L21/306 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/288 ,  H01L21/321

摘要： Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.

公开(公告)号：US09842803B2

公开(公告)日：2017-12-12

申请号：US15375567

申请日：2016-12-12

申请人： Samsung Electronics Co., Ltd.

发明人： Jongmin Baek ,  Sangho Rha ,  Sanghoon Ahn ,  Wookyung You ,  Naein Lee

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/528 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.

公开(公告)号：US09711453B2

公开(公告)日：2017-07-18

申请号：US15155539

申请日：2016-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Nae-In Lee

IPC分类号： H01L23/528 ,  H01L21/306 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/288 ,  H01L21/321

CPC分类号： H01L23/5283 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/288 ,  H01L21/306 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.

公开(公告)号：US20160322254A1

公开(公告)日：2016-11-03

申请号：US15205168

申请日：2016-07-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： WOOKYUNG YOU ,  Sanghoon Ahn ,  Sangho Rha ,  Jongmin Baek ,  Nae-In Lee

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L21/7682 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.

公开(公告)号：US20160293547A1

公开(公告)日：2016-10-06

申请号：US15155539

申请日：2016-05-16

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Nae-In Lee

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/321 ,  H01L21/02 ,  H01L21/288 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5283 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/288 ,  H01L21/306 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.

摘要翻译： 提供了形成半导体器件的方法。 形成半导体器件的方法可以包括在金属图案上和在绝缘层的相邻部分上形成覆盖层，所述覆盖层包括相对于所述绝缘层在所述金属图案上的第一蚀刻选择性，以及第二蚀刻层 在绝缘层的部分上相对于绝缘层的蚀刻选择性。 此外，该方法可以包括通过从绝缘层的部分去除覆盖层来形成与金属图案相邻的凹陷区域。 在从绝缘层的部分去除覆盖层之后，覆盖层的至少一部分可以保留在金属图案的最上表面上。 还提供了相关的半导体器件。

公开(公告)号：US10707164B2

公开(公告)日：2020-07-07

申请号：US16296388

申请日：2019-03-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Nae-In Lee

IPC分类号： H01L23/528 ,  H01L21/306 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L21/288 ,  H01L21/321

摘要： Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.

公开(公告)号：US10141258B2

公开(公告)日：2018-11-27

申请号：US15659125

申请日：2017-07-25

申请人： Samsung Electronics Co., Ltd.

发明人： Sangho Rha ,  Jongmin Baek ,  Wookyung You ,  Sanghoon Ahn ,  Naein Lee

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/764

摘要： A semiconductor device includes a substrate, a plurality of first conductive patterns disposed on the substrate and a plurality of second conductive patterns disposed on the first conductive patterns. Respective air gaps are disposed between adjacent ones of the first conductive patterns overlying a first region of the substrate, while adjacent ones of the first conductive patterns overlying a second region of the substrate do not have air gaps disposed therebetween. The air gaps may include first air gaps, and the device may further include second air gaps disposed between adjacent ones of the second conductive patterns in the second region. Adjacent ones of the second conductive patterns overlying a second region of the substrate may not have air gaps disposed therebetween.

公开(公告)号：US20180076127A1

公开(公告)日：2018-03-15

申请号：US15816243

申请日：2017-11-17

申请人： Samsung Electronics Co., Ltd.

发明人： Jongmin Baek ,  Sangho Rha ,  Sanghoon Ahn ,  Wookyung You ,  Naein Lee

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： H01L23/528 ,  H01L21/7682 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.