Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US15177460Application Date: 2016-06-09
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Publication No.: US20160293649A1Publication Date: 2016-10-06
- Inventor: Yoshiyuki KUROKAWA , Takayuki IKEDA , Hikaru TAMURA , Munehiro KOZUMA , Masataka IKEDA , Takeshi AOKI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2010-050486 20100308
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/361 ; H04N5/374 ; H04N5/378 ; H01L29/786 ; H01L31/105

Abstract:
In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
Public/Granted literature
- US10535691B2 Semiconductor device and manufacturing method thereof Public/Granted day:2020-01-14
Information query
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