Invention Application
- Patent Title: SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH
- Patent Title (中): 单个平台，多个循环间隔沉积和蚀刻
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Application No.: US15194456Application Date: 2016-06-27
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Publication No.: US20160307768A1Publication Date: 2016-10-20
- Inventor: Hao CHEN , Chentsau (Chris) Ying , Srinivas D. Nemani , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/033 ; H01L21/306 ; H01L21/3065 ; C23C16/50 ; H01L21/3213 ; H01L21/67 ; C23C16/04 ; C23C16/455 ; H01L21/02 ; H01L21/311
Abstract:
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
Public/Granted literature
- US09852916B2 Single platform, multiple cycle spacer deposition and etch Public/Granted day:2017-12-26
Information query
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