Invention Application
US20160307805A1 METHOD OF FORMING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
有权
形成补充金属氧化物半导体器件的方法
- Patent Title: METHOD OF FORMING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
- Patent Title (中): 形成补充金属氧化物半导体器件的方法
-
Application No.: US15194577Application Date: 2016-06-28
-
Publication No.: US20160307805A1Publication Date: 2016-10-20
- Inventor: Chien-Ming Lai , Chien-Chung Huang , Yu-Ting Tseng , Ya-Huei Tsai , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201410524514.7 20140930
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/3213 ; H01L21/283 ; H01L21/321
Abstract:
The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.
Public/Granted literature
- US09721840B2 Method of forming complementary metal oxide semiconductor device with work function layer Public/Granted day:2017-08-01
Information query
IPC分类:
