发明申请
- 专利标题： DOUBLE-ETCH NANOWIRE PROCESS
- 专利标题（中）： 双重蚀刻NANOWIRE工艺
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申请号： US15206938申请日： 2016-07-11
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公开(公告)号： US20160319441A1公开(公告)日： 2016-11-03
- 发明人: Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Adam Standley
- 申请人： Advanced Silicon Group, Inc.
- 主分类号： C23F1/30
- IPC分类号： C23F1/30 ; H01M10/0525 ; H01M4/134 ; H01L35/10 ; H01M4/04
摘要：
In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
公开/授权文献
- US09783895B2 Double-etch nanowire process 公开/授权日：2017-10-10
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