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公开(公告)号：US20190221683A1
公开(公告)日：2019-07-18
申请号：US16359630
申请日：2019-03-20
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0376 , H01L31/0368 , H01L31/0312 , H01L31/0224 , B82Y30/00 , H01L31/0352 , H01L31/0216
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US10269995B2
公开(公告)日：2019-04-23
申请号：US15622422
申请日：2017-06-14
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/044 , H01L31/0236 , B82Y30/00 , H01L31/0224 , H01L31/0352 , H01L31/0216 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US20180108791A1
公开(公告)日：2018-04-19
申请号：US15837322
申请日：2017-12-11
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Lauren Magliozzi
IPC分类号： H01L31/0236 , H01L31/18 , B82Y40/00 , H01L21/306
CPC分类号： H01L31/02366 , B82Y40/00 , H01L21/30604 , H01L31/0236 , H01L31/1804 , Y02E10/50
摘要： In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
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公开(公告)号：US09768331B2
公开(公告)日：2017-09-19
申请号：US14338752
申请日：2014-07-23
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/044 , H01L31/0236 , B82Y30/00 , H01L31/0224 , H01L31/0352 , H01L31/0216 , H01L31/0312 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US20160319441A1
公开(公告)日：2016-11-03
申请号：US15206938
申请日：2016-07-11
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Adam Standley
IPC分类号： C23F1/30 , H01M10/0525 , H01M4/134 , H01L35/10 , H01M4/04
CPC分类号： C23F1/30 , C30B29/06 , C30B29/60 , H01L21/02603 , H01L21/30604 , H01L21/308 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/4885 , H01L29/0669 , H01L29/0676 , H01L29/413 , H01L35/10 , H01L2924/0002 , H01M4/0426 , H01M4/134 , H01M4/386 , H01M10/0525 , H01M2004/027
摘要： In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.
摘要翻译： 在本公开的一方面，提供了一种方法，包括以下步骤：（a）提供含硅衬底，（b）在衬底上沉积第一金属，（c）使用步骤（b）制备的衬底 第一蚀刻，和（d）使用第二蚀刻蚀刻由步骤（c）制备的衬底，其中所述第二蚀刻比所述第一蚀刻对所沉积的金属更具侵蚀性，其中步骤（d）的结果包括硅纳米线。 该方法还可以包括例如步骤（b1）使第一金属经受使其凝聚的处理和（b2）沉积第二金属。
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公开(公告)号：US20200220033A1
公开(公告)日：2020-07-09
申请号：US16818091
申请日：2020-03-13
发明人： Joanne Yim , Jeffrey B. Miller , Michael Jura , Marcie R. Black , Joanne Forziati , Brian P. Murphy , Lauren Magliozzi
IPC分类号： H01L31/0236 , H01L31/18
摘要： A silicon-containing substrate including a top surface which comprises nanostructuring having a plurality of rounded depressions with depths greater than 20 nm.
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公开(公告)号：US20170278988A1
公开(公告)日：2017-09-28
申请号：US15622422
申请日：2017-06-14
发明人： Michael Jura , Marcie R. Black , Jeffrey B. Miller , Joanne Yim , Joanne Forziati , Brian P. Murphy , Richard Chleboski
IPC分类号： H01L31/0236 , B82Y30/00 , H01L31/0216 , H01L31/0224 , H01L31/0312 , H01L31/0352 , H01L31/0368 , H01L31/0376 , H01L31/18 , H01L29/06
CPC分类号： H01L31/02363 , B82Y30/00 , H01L29/0673 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/0312 , H01L31/035227 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/50
摘要： A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.
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公开(公告)号：US20170170346A1
公开(公告)日：2017-06-15
申请号：US15441744
申请日：2017-02-24
发明人： Marcie R. Black , Jeffrey B. Miller , Michael Jura , Claire Kearns-McCoy , Joanne Yim , Brian P. Murphy
IPC分类号： H01L31/0352 , H01L21/306 , H01L29/06 , H01L29/16 , H01L21/308 , H01L21/288 , H01L21/3213 , H01L31/0224 , H01L31/028 , H01L31/18 , H01L21/285 , H01L21/02
CPC分类号： H01L31/035227 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02068 , H01L21/2855 , H01L21/28568 , H01L21/288 , H01L21/30604 , H01L21/3081 , H01L21/32134 , H01L29/0669 , H01L29/0676 , H01L29/16 , H01L31/022408 , H01L31/028 , H01L31/1804 , Y10S977/762 , Y10S977/814 , Y10S977/834 , Y10S977/888 , Y10S977/891 , Y10S977/892 , Y10S977/948
摘要： In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.
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9.发明申请公开(公告)号：US20150340526A1
公开(公告)日：2015-11-26
申请号：US14816165
申请日：2015-08-03
IPC分类号： H01L31/0352 , H01L31/068 , H01L31/028 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/035227 , H01L31/02167 , H01L31/028 , H01L31/0284 , H01L31/0288 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y10S977/762
摘要： In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
摘要翻译： 一方面，本发明涉及包括硅衬底的器件，其中衬底表面的至少一部分可以是硅纳米线阵列; 以及覆盖硅纳米线阵列的氧化铝层。 在一些实施例中，该装置可以是太阳能电池。 在一些实施例中，该装置可以是p-n结。 在一些实施例中，p-n结可以位于纳米线阵列的底表面下方。
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公开(公告)号：US10079322B2
公开(公告)日：2018-09-18
申请号：US15441744
申请日：2017-02-24
发明人： Marcie R. Black , Jeffrey B. Miller , Michael Jura , Claire Kearns-McCoy , Joanne Yim , Brian P. Murphy
IPC分类号： H01L21/306 , H01L31/0352 , H01L21/285 , H01L29/06 , H01L29/16 , H01L21/02 , H01L21/288 , H01L21/3213 , H01L31/0224 , H01L31/028 , H01L31/18 , H01L21/308 , B82Y20/00 , B82Y30/00 , B82Y40/00
CPC分类号： H01L31/035227 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02068 , H01L21/2855 , H01L21/28568 , H01L21/288 , H01L21/30604 , H01L21/3081 , H01L21/32134 , H01L29/0669 , H01L29/0676 , H01L29/16 , H01L31/022408 , H01L31/028 , H01L31/1804 , Y10S977/762 , Y10S977/814 , Y10S977/834 , Y10S977/888 , Y10S977/891 , Y10S977/892 , Y10S977/948
摘要： In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.
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