Invention Application
US20160336072A1 System And Method For Programming Split-Gate, Non-volatile Memory Cells
审中-公开
用于编程分离门，非易失性存储单元的系统和方法
- Patent Title: System And Method For Programming Split-Gate, Non-volatile Memory Cells
- Patent Title (中): 用于编程分离门，非易失性存储单元的系统和方法
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Application No.: US15084955Application Date: 2016-03-30
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Publication No.: US20160336072A1Publication Date: 2016-11-17
- Inventor: Xiaozhou Qian , Viktor Markov , Jong-Won Yoo , Xiao Yan Pi , Alexander Kotov
- Applicant: Silicon Storage Technology, Inc.
- Priority: CN201510166483.7 20150409
- Main IPC: G11C16/12
- IPC: G11C16/12 ; G11C16/04
Abstract:
The disclosed embodiments comprise a flash memory device and a method of programming the device in a way that reduces degradation of the device compared to prior art methods.
Public/Granted literature
- US10079061B2 System and method for programming split-gate, non-volatile memory cells Public/Granted day:2018-09-18
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