Invention Application
US20160351373A1 HIGH-SPEED HOTSPOT OR DEFECT IMAGING WITH A CHARGED PARTICLE BEAM SYSTEM
有权
高速小孔或带充电粒子束系统的缺陷成像
- Patent Title: HIGH-SPEED HOTSPOT OR DEFECT IMAGING WITH A CHARGED PARTICLE BEAM SYSTEM
- Patent Title (中): 高速小孔或带充电粒子束系统的缺陷成像
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Application No.: US15162249Application Date: 2016-05-23
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Publication No.: US20160351373A1Publication Date: 2016-12-01
- Inventor: Hong Xiao , Christopher Maher
- Applicant: KLA-TENCOR CORPORATION
- Main IPC: H01J37/147
- IPC: H01J37/147 ; H01J37/06 ; H01J37/20
Abstract:
An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.
Public/Granted literature
- US09754761B2 High-speed hotspot or defect imaging with a charged particle beam system Public/Granted day:2017-09-05
Information query
