公开(公告)号：US20180149603A1

公开(公告)日：2018-05-31

申请号：US15826019

申请日：2017-11-29

Applicant: KLA-Tencor Corporation

Inventor： Santosh Bhattacharyya ,  Devashish Sharma ,  Christopher Maher ,  Bo Hua ,  Philip Measor ,  Robert M. Danen

IPC: G01N21/95 ,  G01N23/04 ,  G01R31/28 ,  G06T7/00

CPC classification number: G01N21/9505 ,  G01N21/956 ,  G01N23/04 ,  G01N2021/8883 ,  G01N2223/6462 ,  G01R31/2831 ,  G01R31/311 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/20081 ,  G06T2207/20084 ,  G06T2207/30148

Abstract: Methods and systems for discovery of defects of interest (DOI) buried within three dimensional semiconductor structures and recipe optimization are described herein. The volume of a semiconductor wafer subject to defect discovery and verification is reduced by storing images associated with a subset of the total depth of the semiconductor structures under measurement. Image patches associated with defect locations at one or more focus planes or focus ranges are recorded. The number of optical modes under consideration is reduced based on any of a comparison of one or more measured wafer level defect signatures and one or more expected wafer level defect signatures, measured defect signal to noise ratio, and defects verified without de-processing. Furthermore, verified defects and recorded images are employed to train a nuisance filter and optimize the measurement recipe. The trained nuisance filter is applied to defect images to select the optimal optical mode for production.

公开(公告)号：US20160351373A1

公开(公告)日：2016-12-01

申请号：US15162249

申请日：2016-05-23

Applicant: KLA-TENCOR CORPORATION

Inventor： Hong Xiao ,  Christopher Maher

IPC: H01J37/147 ,  H01J37/06 ,  H01J37/20

CPC classification number: H01J37/1472 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817

Abstract: An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.

Abstract translation: 检查工具包括控制器，其被配置为产生用于电子束的扫描图案以对晶片上的感兴趣区域进行成像。 扫描图案最小化在感兴趣区域之间的电子束在晶片表面上的停留时间。 可以基于感兴趣的区域来选择至少一个舞台速度和至少一个光栅图案。 控制器向电子束光学器件发送指令，以使用扫描图案将电子束在晶片表面上的感兴趣区域引导。

公开(公告)号：US09754761B2

公开(公告)日：2017-09-05

申请号：US15162249

申请日：2016-05-23

Applicant: KLA-TENCOR CORPORATION

Inventor： Hong Xiao ,  Christopher Maher

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/20 ,  H01J37/06

CPC classification number: H01J37/1472 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/2817

Abstract: An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.

公开(公告)号：US10535131B2

公开(公告)日：2020-01-14

申请号：US15350632

申请日：2016-11-14

Applicant: KLA-Tencor Corporation

Inventor： Christopher Maher ,  Bjorn Brauer ,  Vijayakumar Ramachandran ,  Laurent Karsenti ,  Eliezer Rosengaus ,  John R. Jordan, III ,  Roni Miller

IPC: G06K9/62 ,  G06K9/74 ,  G06T7/00 ,  G06T7/11

Abstract: A defect detection method includes acquiring a reference image; selecting a target region of the reference image; identifying, based on a matching metric, one or more comparative regions of the reference image corresponding to the target region; acquiring a test image; masking the test image with the target region of the reference image and the one or more comparative regions of the reference image; defining a defect threshold for the target region in the test image based on the one or more comparative regions in the test image; and determining whether the target region of the test image contains a defect based on the defect threshold.

公开(公告)号：US11047806B2

公开(公告)日：2021-06-29

申请号：US15826019

申请日：2017-11-29

Applicant: KLA-Tencor Corporation

Inventor： Santosh Bhattacharyya ,  Devashish Sharma ,  Christopher Maher ,  Bo Hua ,  Philip Measor ,  Robert M. Danen

IPC: G06K9/00 ,  G01N21/95 ,  G01R31/311 ,  G01N21/956 ,  G01N23/04 ,  G01R31/28 ,  G06T7/00 ,  G01N21/88

Abstract: Methods and systems for discovery of defects of interest (DOI) buried within three dimensional semiconductor structures and recipe optimization are described herein. The volume of a semiconductor wafer subject to defect discovery and verification is reduced by storing images associated with a subset of the total depth of the semiconductor structures under measurement. Image patches associated with defect locations at one or more focus planes or focus ranges are recorded. The number of optical modes under consideration is reduced based on any of a comparison of one or more measured wafer level defect signatures and one or more expected wafer level defect signatures, measured defect signal to noise ratio, and defects verified without de-processing. Furthermore, verified defects and recorded images are employed to train a nuisance filter and optimize the measurement recipe. The trained nuisance filter is applied to defect images to select the optimal optical mode for production.

公开(公告)号：US20170140516A1

公开(公告)日：2017-05-18

申请号：US15350632

申请日：2016-11-14

Applicant: KLA-Tencor Corporation

Inventor： Christopher Maher ,  Bjorn Brauer ,  Vijayakumar Ramachandran ,  Laurent Karsenti ,  Eliezer Rosengaus ,  John R. Jordan, III ,  Roni Miller

IPC: G06T7/00 ,  G06K9/74 ,  G06K9/62 ,  G06T7/11

CPC classification number: G06T7/001 ,  G06K9/6202 ,  G06K9/6212 ,  G06K9/74 ,  G06T7/11 ,  G06T2207/20182 ,  G06T2207/30148

Abstract: A defect detection method includes acquiring a reference image; selecting a target region of the reference image; identifying, based on a matching metric, one or more comparative regions of the reference image corresponding to the target region; acquiring a test image; masking the test image with the target region of the reference image and the one or more comparative regions of the reference image; defining a defect threshold for the target region in the test image based on the one or more comparative regions in the test image; and determining whether the target region of the test image contains a defect based on the defect threshold.