Method and System for Generating Programmed Defects for Use in Metrology Measurements

    公开(公告)号:US20180113387A1

    公开(公告)日:2018-04-26

    申请号:US15730551

    申请日:2017-10-11

    Abstract: A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern having a field-of-view containing the programmed defect. The system includes a controller including one or more processors. The one or more processors are configured to receive the images of the first array pattern and the second array pattern from the metrology, and determine a metrology parameter associated with the first array pattern or the second array pattern.

    Method and system for generating programmed defects for use in metrology measurements

    公开(公告)号:US10768533B2

    公开(公告)日:2020-09-08

    申请号:US15730551

    申请日:2017-10-11

    Abstract: A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern having a field-of-view containing the programmed defect. The system includes a controller including one or more processors. The one or more processors are configured to receive the images of the first array pattern and the second array pattern from the metrology, and determine a metrology parameter associated with the first array pattern or the second array pattern.

    Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system

    公开(公告)号:US10446367B2

    公开(公告)日:2019-10-15

    申请号:US15969158

    申请日:2018-05-02

    Inventor: Hong Xiao

    Abstract: Disclosed are apparatus and methods for performing overlay metrology upon a target having at least two layers formed thereon. A target having a plurality of periodic structures for measuring overlay in at least two overlay directions is provided. A charged particle beam is scanned in a first direction across a plurality of scan swaths of the target and at a first tilt with respect to the target so that each edge of the periodic structures is scanned at an angle. The charged particle beam is scanned in a second direction, which is opposite the first direction, across the plurality of scan swaths and at a second tilt that is 180° from the first tilt. The first and second direction scanning operations are then repeated for different first and second tilts and a different plurality of scan swaths of the target so that the target is scanned symmetrically. Images that are generated by the first and second direction scanning operations are combined to form a combined image, and an overlay error of the target is determined and reported based on analyzing the combined image.

    Method and System for Adaptively Scanning a Sample During Electron Beam Inspection
    5.
    发明申请
    Method and System for Adaptively Scanning a Sample During Electron Beam Inspection 有权
    电子束检测期间自适应扫描样品的方法和系统

    公开(公告)号:US20160155605A1

    公开(公告)日:2016-06-02

    申请号:US15018104

    申请日:2016-02-08

    Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

    Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源,样本台,一组电子元件,检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查,并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

    Method and apparatus for detecting buried defects
    6.
    发明授权
    Method and apparatus for detecting buried defects 有权
    检测埋藏缺陷的方法和装置

    公开(公告)号:US09116109B2

    公开(公告)日:2015-08-25

    申请号:US14230987

    申请日:2014-03-31

    Abstract: One embodiment relates to a method of detecting a buried defect in a target microscopic metal feature. An imaging apparatus is configured to impinge charged particles with a landing energy such that the charged particles, on average, reach a depth within the target microscopic metal feature. In addition, the imaging apparatus is configured to filter out secondary electrons and detect backscattered electrons. The imaging apparatus is then operated to collect the backscattered electrons emitted from the target microscopic metal feature due to impingement of the charged particles. A backscattered electron (BSE) image of the target microscopic metal feature is compared with the BSE image of a reference microscopic metal feature to detect and classify the buried defect. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及一种检测目标微观金属特征中的埋入缺陷的方法。 成像装置被配置为以带有电荷的颗粒撞击着陆能量,使得带电粒子平均达到目标微观金属特征内的深度。 此外,成像装置被配置为滤除二次电子并检测反向散射电子。 然后操作成像装置以收集由于带电粒子的撞击而从目标微观金属特征发射的背散射电子。 将目标微观金属特征的背散射电子(BSE)图像与参考微观金属特征的BSE图像进行比较,以检测和分类埋藏缺陷。 还公开了其它实施例,方面和特征。

    System and method for cathodoluminescence-based semiconductor wafer defect inspection

    公开(公告)号:US10018579B1

    公开(公告)日:2018-07-10

    申请号:US15255024

    申请日:2016-09-01

    CPC classification number: G01N23/2254 G01N2223/6116 G01N2223/646

    Abstract: A system for measuring cathodoluminescence from a substrate includes an electron beam source configured to generate an electron beam, a sample stage configured to secure a sample and an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through onto a portion of the sample. The system also includes a set of guide optics located at a position within or below the electron-optical column and a set of collection optics, wherein the set of guide optics captures cathodoluminescent light emitted from the sample in response to the electron beam and directs the cathodoluminescent light to the set of collection optics. In addition, the system includes a detector. The set of collection optics is configured to image the cathodoluminescent light onto the detector.

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