发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND MANUFACTURING PROCESS THEREOF
- 专利标题（中）： 半导体结构及其制造工艺
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申请号： US14724676申请日： 2015-05-28
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公开(公告)号： US20160351563A1公开(公告)日： 2016-12-01
- 发明人: Yi-Jen CHEN , Chun-Sheng LIANG , Shu-Hui WANG , Shih-Hsun CHANG , Hsin-Che CHIANG
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/49 ; H01L29/51 ; H01L21/311 ; H01L21/8234 ; H01L21/02 ; H01L21/762 ; H01L29/06 ; H01L29/423
摘要：
A process of manufacturing a semiconductor structure is provided. The process begins with forming a work function metal layer on a substrate, and a hardmask is covered over the work function metal layer. A trench is formed to penetrate the hardmask and the work function metal layer, and an isolation structure is filled in the trench.
公开/授权文献
- US09859273B2 Semiconductor structure and manufacturing process thereof 公开/授权日：2018-01-02
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