Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE
- Patent Title (中): 半导体结构
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Application No.: US15232796Application Date: 2016-08-09
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Publication No.: US20160351674A1Publication Date: 2016-12-01
- Inventor: Kun-Ju Li , Po-Cheng Huang , Yu-Ting Li , Jen-Chieh Lin , Chih-Hsun Lin , Tzu-Hsiang Hung , Wu-Sian Sie , I-Lun Hung , Wen-Chin Lin , Chun-Tsen Lu
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/66 ; H01L29/51 ; H01L21/324 ; H01L29/66 ; H01L21/02 ; H01L21/321
Abstract:
A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a first top surface. A shrinkable layer is formed to cover the dielectric layer, where the shrinkable layer has a second top surface. A treatment process is performed to shrink a part of the shrinkable layer according to a topography of the second top surface, thereby flattening the second top surface. A semiconductor structure formed by said semiconductor process is also provided.
Information query
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