发明申请
US20160372478A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND FERROELECTRIC LAYER
审中-公开
半导体器件，半导体器件的制造方法和电介质层
- 专利标题： SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND FERROELECTRIC LAYER
- 专利标题（中）： 半导体器件，半导体器件的制造方法和电介质层
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申请号： US15257064申请日： 2016-09-06
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公开(公告)号： US20160372478A1公开(公告)日： 2016-12-22
- 发明人: Tsunehiro INO , Shosuke FUJII , Seiji INUMIYA
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2014-053993 20140317
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/3105 ; H01L29/51 ; H01L21/02 ; H01L49/02 ; H01L29/78
摘要：
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric layer including hafnium oxide provided between the first conductive layer and the second conductive layer, a sum of hafnium (Hf) and oxygen (O) in the hafnium oxide being 98 atomic percent or more.
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