Invention Application
US20160372562A1 PROCESS FOR PRODUCING A CONTACT ON AN ACTIVE ZONE OF AN INTEGRATED CIRCUIT, FOR EXAMPLE PRODUCED ON AN SOI SUBSTRATE, IN PARTICULAR AN FDSOI SUBSTRATE, AND CORRESPONDING INTEGRATED CIRCUIT 有权
用于在集成电路的活动区域上生产接触的方法,例如在SOI衬底上生产的示例,特别是FDSOI衬底和相应的集成电路

PROCESS FOR PRODUCING A CONTACT ON AN ACTIVE ZONE OF AN INTEGRATED CIRCUIT, FOR EXAMPLE PRODUCED ON AN SOI SUBSTRATE, IN PARTICULAR AN FDSOI SUBSTRATE, AND CORRESPONDING INTEGRATED CIRCUIT
Abstract:
An integrated circuit includes an active zone lying above a semiconductor substrate. A cavity borders the active zone and extends, in an insulating zone, as far as into the vicinity of a semiconductor region. An insulating multilayer is provide and an electrically conductive contact extends within the insulating multilayer to emerging onto the active zone and into the cavity. The insulating multilayer includes a first insulating layer covering the active zone outside the contact and lining the walls of the cavity. An additional insulating layer covers the portion of the first insulating layer lining the walls of the cavity. The contact reaches the additional insulating layer in the cavity. An insulating region lies on top of the first insulating layer and the additional insulating layer made from insulating material around the contact.
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