发明申请
- 专利标题: GAS BARRIER FILM AND METHOD OF MANUFACTURING GAS BARRIER FILM
- 专利标题(中): 气体阻隔膜和制造气体阻隔膜的方法
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申请号: US15270001申请日: 2016-09-20
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公开(公告)号: US20170009339A1公开(公告)日: 2017-01-12
- 发明人: Seigo NAKAMURA , Yoshihiko MOCHIZUKI , Atsushi MUKAI
- 申请人: FUJIFILM Corporation
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2014-059541 20140324
- 主分类号: C23C16/40
- IPC分类号: C23C16/40 ; C23C16/505
摘要:
A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the 0 proportion per unit thickness is 2%/nm to 8%/nm.