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公开(公告)号：US20170009339A1
公开(公告)日：2017-01-12
申请号：US15270001
申请日：2016-09-20
申请人： FUJIFILM Corporation
IPC分类号： C23C16/40 , C23C16/505
CPC分类号： C23C16/401 , C23C16/308 , C23C16/345 , C23C16/505
摘要： A gas barrier film includes a substrate film and an inorganic layer, in which the inorganic layer includes Si, N, H, and O, the inorganic layer includes a uniform region having a thickness of more than 5 nm at the center in a thickness direction, in the uniform region, a ratio of Si, N, H, and O is uniform and an O proportion is low, and either or both interface-contact regions of the inorganic layer are oxygen-containing regions in which the O proportion represented by the expression “O Proportion: (Number of O/Total Number of Si, N, and O)×100%” increases in a direction from the uniform region side to an interface and in which a variation of the 0 proportion per unit thickness is 2%/nm to 8%/nm.
摘要翻译： 阻气膜包括基材膜和无机层，其中无机层包括Si，N，H和O，无机层在厚度方向的中心包括厚度大于5nm的均匀区域 在均匀区域中，Si，N，H和O的比例是均匀的，O比例低，无机层的界面接触区域中的任一个或两者都是含氧区域，其中O比例由 在均匀区域侧至界面的方向上，“O比例（O / Si / N，O的总数×100％）”的表达式增加，每单位厚度的0比例的变化为 2％/ nm至8％/ nm。
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公开(公告)号：US20230399748A1
公开(公告)日：2023-12-14
申请号：US18451862
申请日：2023-08-18
申请人： FUJIFILM Corporation
IPC分类号： C23C16/509 , C23C16/26 , C23C16/52 , C23C16/44
CPC分类号： C23C16/509 , C23C16/26 , C23C16/52 , C23C16/4412
摘要： An object of the present invention is to provide a film forming method and an atmospheric plasma film forming apparatus capable of forming a film having high flatness at a high film forming speed by using atmospheric plasma film formation. The object is achieved by introducing plasma generation gas from an inner side flow passage that passes between a pair of electrodes, by introducing raw material gas from at least one of a first outer side flow passage or a second outer side flow passage that pass through an outer side of the pair of electrodes, and by making a gas flow rate between an outlet port of the first outer side flow passage and a substrate and a gas flow rate between an outlet port of the second outer side flow passage and the substrate unequal.
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公开(公告)号：US20210001601A1
公开(公告)日：2021-01-07
申请号：US17023120
申请日：2020-09-16
申请人： FUJIFILM Corporation
发明人： Yoshihiko MOCHIZUKI , Shinya SUZUKI
摘要： A gas barrier film includes a substrate, a base inorganic layer, a silicon nitride layer formed using the base inorganic layer as a base, and a mixed layer formed at a boundary surface of the base inorganic layer and the silicon nitride layer, in which the base inorganic layer contains silicon oxide, the mixed layer contains a component derived from the base inorganic layer and a component derived from the silicon nitride layer, and a thickness of the mixed layer is 3 nm or more.
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公开(公告)号：US20220190303A1
公开(公告)日：2022-06-16
申请号：US17668792
申请日：2022-02-10
申请人： FUJIFILM Corporation
摘要： Provided is an organic electroluminescent display device having excellent thermal durability including, in order from a visual recognition side, at least a circularly polarizing plate, and an organic electroluminescent display element having a pair of electrodes and an organic light emitting layer sandwiched therebetween, in which the circularly polarizing plate has a polarizer and an optically anisotropic layer, the polarizer having a thickness of 10 μm or less and containing a polyvinyl alcohol-based resin, or having a dichroic organic coloring agent, the optically anisotropic layer being formed of a composition containing a polymerizable liquid crystal compound exhibiting reverse wavelength dispersibility, a silicon nitride layer being included between the circularly polarizing plate and the organic electroluminescent display element, and the circularly polarizing plate being disposed between two substrates having a moisture permeability of 1 g/m2·day or less, and one of the low moisture permeability substrates is the silicon nitride layer.
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公开(公告)号：US20220403181A1
公开(公告)日：2022-12-22
申请号：US17895606
申请日：2022-08-25
申请人： FUJIFILM Corporation
摘要： Provided is a hard coat laminate having excellent abrasion resistance and heat resistance. The hard coat laminate includes: a substrate; and a base layer disposed on one main surface side of the substrate, in which the base layer contains inorganic nanoparticles, the base layer contains oxygen atoms, carbon atoms, and silicon atoms, the base layer has, on a surface side opposite to the substrate, a first region in which a compositional ratio of carbon atoms to all elements excluding hydrogen decreases as a distance from the substrate increases, in a region other than the first region of the base layer, a compositional ratio of carbon atoms to all elements excluding hydrogen is 5 atom % to 40 atom %, and a compositional ratio of carbon atoms on a surface of the first region is 1 atom % or less.
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公开(公告)号：US20220170158A1
公开(公告)日：2022-06-02
申请号：US17674856
申请日：2022-02-18
申请人： FUJIFILM CORPORATION
发明人： Yoshihiko MOCHIZUKI , Tomokazu SEKI
IPC分类号： C23C16/515 , H05H1/26
摘要： Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.
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公开(公告)号：US20210402739A1
公开(公告)日：2021-12-30
申请号：US17471547
申请日：2021-09-10
申请人： FUJIFILM Corporation
发明人： Yoshihiko MOCHIZUKI
摘要： It is an object to provide a functional film which does not require formation of a protective layer by laminating and applying a protective film, and sticking of the protective layer, and also has high moist heat resistance; and a method for producing the same. The object is accomplished by a configuration where the functional film includes a support, an inorganic layer, and a protective layer consisting of a resin film, in which the inorganic layer and the protective layer are directly joined to each other, and in a case where an intensity ratio obtained by dividing an intensity of a maximum peak B in a range of 2,900 to 3,000 cm−1 by an intensity of a maximum peak A in a range of 2,800 to 2,900 cm−1 in an infrared absorption spectrum is defined as B/A, the intensity ratio B/A in a surface of the protective layer on the inorganic layer side is 1.04 times or more the intensity ratio B/A in a surface of the protective layer on the opposite side.
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公开(公告)号：US20230257874A1
公开(公告)日：2023-08-17
申请号：US18298008
申请日：2023-04-10
申请人： FUJIFILM Corporation
发明人： Yoshihiko MOCHIZUKI , Shinya SUZUKI
CPC分类号： C23C16/345 , C23C16/401 , C23C16/50 , H01L31/0481
摘要： A method of manufacturing a gas barrier film comprises, a first film forming step of forming a base layer; a second film forming step of forming a silicon nitride layer on a surface of the base layer; and a third film forming step of forming a protective inorganic layer on a surface of the silicon nitride layer, wherein each of the second film forming step and the third film forming step includes film forming by plasma CVD, wherein the gas barrier film includes the substrate, the base layer, the silicon nitride layer, and the protective inorganic layer, in which the protective inorganic layer formed of silicon oxide, a thickness of the silicon nitride layer is 3 nm to 100 nm, and a ratio t2/t1 of a thickness t2 of the protective inorganic layer to the thickness t1 of the silicon nitride layer 3 to 80.
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公开(公告)号：US20230013404A1
公开(公告)日：2023-01-19
申请号：US17947171
申请日：2022-09-19
申请人： FUJIFILM Corporation
摘要： An object of the present invention is to provide a laminated sheet for a metal-clad laminate and a method of manufacturing the same, the laminated sheet including: a substrate that includes a liquid crystal polymer or a fluoropolymer; and an adhesive layer, in which adhesiveness with a metal layer formed on the adhesive layer is excellent. Another object of the present invention is to provide a metal-clad laminate and a method of manufacturing the same.
A laminated sheet for a metal-clad laminate includes: a substrate that includes a liquid crystal polymer or a fluoropolymer; an inorganic oxide layer; and an adhesive layer, in which the substrate, the inorganic oxide layer, and the adhesive layer are laminated in this order.-
公开(公告)号：US20190393446A1
公开(公告)日：2019-12-26
申请号：US16562323
申请日：2019-09-05
申请人： FUJIFILM Corporation
发明人： Yoshihiko MOCHIZUKI , Tatsuya INABA
IPC分类号： H01L51/52 , C23C16/50 , C23C16/46 , C23C16/34 , C23C16/40 , C23C16/455 , H01L31/0203 , H01L51/44 , H01L51/56
摘要： A gas barrier film includes a support, and an inorganic layer containing at least one of oxygen, nitrogen, or carbon, silicon, and hydrogen, in which a hydrogen atom concentration in a region X of the inorganic layer is 10% to 45% by atom, a hydrogen atom concentration in a region Y is 5% to 35% by atom and is lower than the hydrogen atom concentration in the region X, and in the support, an intensity ratio of 3000 to 3500 cm−1/2700 to 3000 cm−1 of an IR spectrum is 1 to 7 as a ratio of inorganic layer side surface/opposite side surface. A film forming method includes heating a base material, forming an inorganic layer by hydrogen addition, and forming another inorganic layer on the base material on which the inorganic layer is formed.
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