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公开(公告)号：US20240114797A1
公开(公告)日：2024-04-04
申请号：US18454073
申请日：2023-08-23
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA , Shinya SUGIMOTO , Tsutomu SASAKI
IPC: H10N30/50 , H10N30/20 , H10N30/80 , H10N30/853
CPC classification number: H10N30/50 , H10N30/206 , H10N30/802 , H10N30/8554
Abstract: A piezoelectric element includes a substrate, a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode, in which both the first piezoelectric film and the second piezoelectric film have spontaneous polarizations aligned in a film thickness direction and directions of the spontaneous polarizations are the same, and in a case where in a hysteresis curve of one piezoelectric film, a coercive voltage Vcf+, a coercive voltage Vcf−, |Vcf+−Vcf−|=ΔVcf, and the larger of an absolute value of Vcf+ and an absolute value of Vcf− is denoted by Vcf, and in a hysteresis curve of the other piezoelectric film, a coercive voltage Vcr+, a coercive voltage Vcr−, |Vcr+−Vcr−|=ΔVcr, and the larger of an absolute value of Vcr+ and an absolute value Vcr− is denoted by Vcr, ΔVcr
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公开(公告)号：US20240114796A1
公开(公告)日：2024-04-04
申请号：US18454072
申请日：2023-08-23
Applicant: FUJIFILM CORPORATION
Inventor： Seigo NAKAMURA , Hiroyuki KOBAYASHI , Shinya SUGIMOTO , Tsutomu SASAKI
IPC: H10N30/50 , H10N30/20 , H10N30/80 , H10N30/853
CPC classification number: H10N30/50 , H10N30/206 , H10N30/802 , H10N30/8554
Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb Zr, Ti, and M, as a main component, Pb composition ratios in the perovskite-type oxides contained in the first piezoelectric film and the second piezoelectric film are different from each other, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.
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公开(公告)号：US20170315222A1
公开(公告)日：2017-11-02
申请号：US15648682
申请日：2017-07-13
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Yoshihisa USAMI
CPC classification number: G01S13/42 , A61B5/107 , G01R29/08 , H01L51/107 , H01L51/448 , H01L51/5253 , H04L5/0035 , H04L5/0048 , H04L5/0073 , H04L27/2655 , H05B33/04 , Y02E10/549
Abstract: After an electroconductive projection is formed on an electrode of an electronic element, a gas barrier film on which an adhesive layer and a contact hole are formed is laminated and pressure-bonded onto a substrate on which the electronic element is formed. Alternatively, after a gas barrier film on which an adhesive layer and a contact hole are formed is laminated on a substrate on which an electronic element is formed and an electroconductive projection is formed on the electrode inside the contact hole, the substrate and the gas barrier film are pressure-bonded to each other, and the contact hole is filled with an electroconductive material. In this manner, there are provided a method of manufacturing an electronic device; and an electronic device to which a take-out wire used to reliably connect the electronic device to an external device using a small contact hole can be connected even in a case where the electronic device is small.
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公开(公告)号：US20240023453A1
公开(公告)日：2024-01-18
申请号：US18472170
申请日：2023-09-21
Applicant: FUJIFILM CORPORATION
Inventor： Fumihiko MOCHIZUKI , Seigo NAKAMURA , Hiroyuki KOBAYASHI
CPC classification number: H10N30/877 , H10N30/06
Abstract: The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is composed of an oxide conductive layer containing In, and regarding an interface region between the piezoelectric film and the oxide conductive layer of the upper electrode layer, in an intensity profile of binding energy, which is acquired by an X-ray photoelectron spectroscopy measurement, a peak intensity ratio γ/α satisfies γ/α≤0.25, wherein a is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to oxygen, and γ is a peak intensity of binding energy derived from a 3d5/2 orbital of In bonded to an OH group.
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5.发明申请公开(公告)号：US20200002804A1
公开(公告)日：2020-01-02
申请号：US16568905
申请日：2019-09-12
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Kenichi UMEDA , Yuichiro ITAI , Shinichiro SONODA
Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.
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Patent Agency Ranking
公开(公告)号：US20170155067A1
公开(公告)日：2017-06-01
申请号：US15430629
申请日：2017-02-13
Applicant: FUJIFILM CORPORATION
Inventor： Yoshihisa USAMI , Kouki TAKAHASHI , Yoshiki MAEHARA , Seigo NAKAMURA
IPC: H01L51/05 , B23K26/351
CPC classification number: H01L51/0512 , B23K26/0006 , B23K26/066 , B23K26/082 , B23K26/351 , B23K26/359 , B23K26/364 , B23K26/402 , B23K2101/42 , B23K2103/50 , H01L51/0014 , H01L51/0024 , H01L51/0558
Abstract: Disclosed are a manufacturing method capable of manufacturing a semiconductor device having a plurality of organic semiconductor elements with a simple process and high productivity, and a semiconductor device. This problem is solved by forming, on an insulating substrate, electrodes corresponding to a plurality of semiconductor elements, in which the position of an uppermost portion of each of a source electrode and a drain electrode is higher than that of a gate electrode, forming an organic semiconductor film on a surface of an insulating support, forming grooves in the organic semiconductor film to form divided regions according to the individual semiconductor elements, and aligning and laminating the insulating support and the insulating substrate.
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公开(公告)号：US20240114801A1
公开(公告)日：2024-04-04
申请号：US18458127
申请日：2023-08-29
Applicant: FUJIFILM CORPORATION
Inventor： Seigo NAKAMURA , Hiroyuki KOBAYASHI , Shinya SUGIMOTO , Tsutomu SASAKI
IPC: H10N30/853 , H10N30/06 , H10N30/20 , H10N30/88
CPC classification number: H10N30/8554 , H10N30/06 , H10N30/2047 , H10N30/883
Abstract: A piezoelectric element includes a substrate; and a first electrode, a first piezoelectric film, a second electrode, a second piezoelectric film, and a third electrode which are provided on the substrate in this order, in which both the first piezoelectric film and the second piezoelectric film contain a perovskite-type oxide containing Pb at an A site and containing Zr, Ti, and M at a B site as a main component, an M composition ratio in the first piezoelectric film is different from an M composition ratio in the second piezoelectric film, and polarization-electric field hysteresis measured for the first piezoelectric film with the first electrode grounded and the second electrode as a drive electrode, and polarization-electric field hysteresis measured for the second piezoelectric film with the second electrode grounded and the third electrode as a drive electrode are shifted in the same electric field direction with respect to origins thereof.
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公开(公告)号：US20240023452A1
公开(公告)日：2024-01-18
申请号：US18338351
申请日：2023-06-21
Applicant: FUJIFILM CORPORATION
Inventor： Hiroyuki KOBAYASHI , Seigo NAKAMURA
IPC: H10N30/853 , H10N30/00
CPC classification number: H10N30/8554 , H10N30/10516
Abstract: Regarding the piezoelectric laminate and the piezoelectric element, in the piezoelectric laminate including, on a substrate, a lower electrode layer and a piezoelectric film in this order, a seed layer consisting of a conductive oxide is provided between the lower electrode layer and the piezoelectric film, and the piezoelectric film contains a perovskite-type oxide represented by General Formula I,
Pb1-y2+αAy2{(Ti,Zr)1-x-y1NbxB1y1}O3 General Formula I
here, A is an A site element, where it is one or more elements including at least La, B1 is a B site element, which is one or more divalent or trivalent elements, O is an oxygen element, and x, y1, y2, and α satisfy 0.05-
公开(公告)号：US20230098590A1
公开(公告)日：2023-03-30
申请号：US17894863
申请日：2022-08-24
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Hiroyuki KOBAYASHI
IPC: H01L41/047 , H01L41/08 , H01L41/187
Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.
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公开(公告)号：US20190173013A1
公开(公告)日：2019-06-06
申请号：US16270289
申请日：2019-02-07
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Hiroyuki YAEGASHI
IPC: H01L51/00 , H01L29/786
Abstract: Provided is a method of producing a high-quality film having a thin film and high uniformity in film thickness or the like. The method of producing a film includes supplying a raw material solution containing a solvent and a material that forms a film onto a substrate and drying the solvent to form the film on the substrate. A coating blade holding the raw material solution on the substrate is used, and the coating blade has a facing surface which faces a surface of the substrate and at least one side surface which is provided in the periphery of the facing surface and is in contact with the raw material solution. The solvent of the raw material solution is dried along a specific direction to form the film.
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