Invention Application
- Patent Title: METHODS FOR THIN FILM DEPOSITION
- Patent Title (中): 薄膜沉积方法
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Application No.: US14811370Application Date: 2015-07-28
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Publication No.: US20170032956A1Publication Date: 2017-02-02
- Inventor: Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
- Applicant: ASM IP Holding B.V.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/285

Abstract:
In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
Public/Granted literature
- US10204790B2 Methods for thin film deposition Public/Granted day:2019-02-12
Information query
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