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    Selective deposition using hydrophobic precursors
    1.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US11081342B2

    公开(公告)日：2021-08-03

    申请号：US15581726

    申请日：2017-04-28

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    2.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 审中-公开

    公开(公告)号：US20170323776A1

    公开(公告)日：2017-11-09

    申请号：US15581726

    申请日：2017-04-28

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

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