公开(公告)号：US20240014030A1

公开(公告)日：2024-01-11

申请号：US18218726

申请日：2023-07-06

Applicant: ASM IP Holding B.V.

Inventor： Agung Setiadi ,  Hiroki Matsuda ,  Jun Kawahara

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/0217 ,  H01J37/32816 ,  H01J37/32449 ,  H01L21/0228 ,  H01L21/02211 ,  H01L21/02274 ,  H01J2237/332 ,  H01J2237/182

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process.

公开(公告)号：US10801106B2

公开(公告)日：2020-10-13

申请号：US15380557

申请日：2016-12-15

Applicant: ASM IP HOLDING B.V.

Inventor： Ryoko Yamada ,  Jun Kawahara ,  Kazuo Sato

IPC: C23C16/44 ,  C23C16/455 ,  B05B16/60 ,  H01J37/32

Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

公开(公告)号：US20190181002A1

公开(公告)日：2019-06-13

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/34 ,  C23C16/455

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：USD834686S1

公开(公告)日：2018-11-27

申请号：US29587855

申请日：2016-12-15

Applicant: ASM IP HOLDING B.V.

Designer： Ryoko Yamada ,  Jun Kawahara ,  Kazuo Sato

公开(公告)号：US20170029948A1

公开(公告)日：2017-02-02

申请号：US14811435

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Juhani Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法和装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，并且可以在不同的温度下将基板与不同的反应物接触，以便最小化或防止不期望的气相反应，化学气相沉积（CVD）和/或原子层沉积（ALD）反应 在不同的反应物或反应物的组合之间。

公开(公告)号：US20200071828A1

公开(公告)日：2020-03-05

申请号：US16677446

申请日：2019-11-07

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285 ,  C23C16/54

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a deposition reactor is provided comprising: a first station configured to contain a substrate, the first station comprising a first heating element; a second station configured to contain the substrate, the second station comprising a second heating element, wherein the first station is configured to contact the substrate with a first reactant in the first station in substantial isolation from the second station such that a layer of the first reactant is deposited on the substrate, wherein the first heating element is configured to heat the first station to a first station temperature during contacting of the substrate with the first reactant, wherein the second station is configured to contact the substrate with a second reactant in the second station substantially in the absence of the first reactant, and wherein the second heating element is configured to heat the second station to a second station temperature during contacting of the substrate with the second reactant, a transfer system; and a controller set to control a cycle of: moving the substrate via the transfer system to the first station, directing the first station to contact the substrate with the first reactant at the first station temperature, moving the substrate to the second station via the transfer system, and directing the second station to contact the substrate with the second reactant at the second station temperature, and further set to repeat the cycle until a film of desired thickness is formed on a surface of the substrate.

公开(公告)号：US12024772B2

公开(公告)日：2024-07-02

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20220341040A1

公开(公告)日：2022-10-27

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US11037780B2

公开(公告)日：2021-06-15

申请号：US15838428

申请日：2017-12-12

Applicant: ASM IP Holding B.V.

Inventor： Toshiaki Iijima ,  Masaki Tokunaga ,  Jun Kawahara

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50

Abstract: A method for manufacturing a semiconductor device includes forming a SiN film on a substrate. Plasma treatment is applied to the SiN film using a He-containing gas.

公开(公告)号：US20170032956A1

公开(公告)日：2017-02-02

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法。 在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。