Multi-stage substrate processing system

    公开(公告)号:US12125722B2

    公开(公告)日:2024-10-22

    申请号:US17351592

    申请日:2021-06-18

    Inventor: Yukihiro Mori

    CPC classification number: H01L21/6719 H01L21/67167 H01L22/20 G02F1/1303

    Abstract: A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

    HIGH-THROUGHPUT SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH MULTIPLE DUAL-CHAMBER MODULES
    4.
    发明申请
    HIGH-THROUGHPUT SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH MULTIPLE DUAL-CHAMBER MODULES 审中-公开
    配有多个双模块的高通量半导体加工设备

    公开(公告)号:US20160181128A1

    公开(公告)日:2016-06-23

    申请号:US15060412

    申请日:2016-03-03

    Abstract: A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.

    Abstract translation: 晶片处理装置包括:设置在同一平面上的反应堆的多个分立单元; 晶片处理室具有分别对应于多个分立单元并且分别连接到多个分立单元的多边形的多边形形状,以及用于负载锁定室的一个附加侧; 附接到晶片处理室的另一侧的负载锁定室; 多个分立的气体箱,分别用于控制对应于多个离散单元并连接到多个分立单元的气体; 以及分别用于控制与多个分立单元相对应并且可拆卸地连接到多个分立单元的电气系统的多个分立电箱,其中气盒和电箱在多个分立单元下方从上方观察交替排列,电箱可以 向外拉出而不与相应的单元断开连接,使得气箱的侧面可以接近。

    Substrate processing apparatus and method of processing substrate

    公开(公告)号:US11761084B2

    公开(公告)日:2023-09-19

    申请号:US15368104

    申请日:2016-12-02

    CPC classification number: C23C16/45565 C23C16/4412 C23C16/452 C23C16/505

    Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

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