公开(公告)号：US12125722B2

公开(公告)日：2024-10-22

申请号：US17351592

申请日：2021-06-18

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: H01L21/67 ,  H01L21/66 ,  G02F1/13

CPC classification number: H01L21/6719 ,  H01L21/67167 ,  H01L22/20 ,  G02F1/1303

Abstract: A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

公开(公告)号：US20210254216A1

公开(公告)日：2021-08-19

申请号：US17171793

申请日：2021-02-09

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori ,  Vincent Hubert Bernard Gilles Babin ,  Naoto Tsuji

IPC: C23C16/455 ,  C23C16/40

Abstract: A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

公开(公告)号：US20170029948A1

公开(公告)日：2017-02-02

申请号：US14811435

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Bert Jongbloed ,  Delphine Longrie ,  Robin Roelofs ,  Lucian Jdira ,  Suvi Juhani Haukka ,  Antti Niskanen ,  Jun Kawahara ,  Yukihiro Mori

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

Abstract: In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法和装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，并且可以在不同的温度下将基板与不同的反应物接触，以便最小化或防止不期望的气相反应，化学气相沉积（CVD）和/或原子层沉积（ALD）反应 在不同的反应物或反应物的组合之间。

公开(公告)号：US20160181128A1

公开(公告)日：2016-06-23

申请号：US15060412

申请日：2016-03-03

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori ,  Takayuki Yamagishi

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/52 ,  H01L21/677

Abstract: A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.

Abstract translation: 晶片处理装置包括：设置在同一平面上的反应堆的多个分立单元; 晶片处理室具有分别对应于多个分立单元并且分别连接到多个分立单元的多边形的多边形形状，以及用于负载锁定室的一个附加侧; 附接到晶片处理室的另一侧的负载锁定室; 多个分立的气体箱，分别用于控制对应于多个离散单元并连接到多个分立单元的气体; 以及分别用于控制与多个分立单元相对应并且可拆卸地连接到多个分立单元的电气系统的多个分立电箱，其中气盒和电箱在多个分立单元下方从上方观察交替排列，电箱可以 向外拉出而不与相应的单元断开连接，使得气箱的侧面可以接近。

公开(公告)号：US11986868B2

公开(公告)日：2024-05-21

申请号：US17180275

申请日：2021-02-19

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/67

CPC classification number: B08B7/0035 ,  H01J37/3244 ,  H01L21/67028

Abstract: Examples of a system dedicated for parts cleaning includes a gas supply apparatus configured to supply a cleaning gas, a first adapter connected to a gas supply port of the gas supply apparatus, an exhaust system configured to exhaust the gas supplied from the gas supply apparatus, and a second adapter connected to a gas inlet of the exhaust system.

公开(公告)号：US20230360953A1

公开(公告)日：2023-11-09

申请号：US18141671

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Koei Aida ,  Yukihiro Mori

IPC: H01L21/687 ,  C23C16/458

CPC classification number: H01L21/68742 ,  H01L21/6875 ,  C23C16/4586

Abstract: A wafer support device includes a susceptor having a wafer mounting surface provided on one surface and a lift pin through hole arranged in the wafer mounting surface, a lift pin inserted into the lift pin through hole, and an elevating device that raises and lowers the susceptor, the wafer mounting surface of the susceptor is uneven, a ventilation path is formed between the lift pin through hole and the lift pin.

公开(公告)号：US11761084B2

公开(公告)日：2023-09-19

申请号：US15368104

申请日：2016-12-02

Applicant: ASM IP Holding B.V.

Inventor： Hiroki Arai ,  Yukihiro Mori ,  Yuya Nonaka

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/505 ,  C23C16/452

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/505

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

公开(公告)号：US11462387B2

公开(公告)日：2022-10-04

申请号：US15954903

申请日：2018-04-17

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311

Abstract: Examples of a substrate processing apparatus include a stage, an outer peripheral ring that surrounds the stage while provided with a gap between a side surface of the stage and the outer peripheral ring, a gas supply unit configured to supply gas from a lower side of the gap to an upper side of the gap, and an upper electrode provided above the stage.

公开(公告)号：US09343343B2

公开(公告)日：2016-05-17

申请号：US14281477

申请日：2014-05-19

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: H01L23/31 ,  H01L21/677 ,  H01L21/67 ,  C23C16/50 ,  H01J37/32 ,  B25J11/00 ,  C23C16/04 ,  C23C16/458

CPC classification number: H01L21/67742 ,  B25J11/0095 ,  C23C16/04 ,  C23C16/345 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32385 ,  H01J37/32532 ,  H01J37/32541 ,  H01L21/67011 ,  H01L21/68707 ,  H01L23/3171 ,  H01L23/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate.

Abstract translation: 使用机械夹持基板的周边的端部执行器来输送基板的方法包括：在传送基板之前，仅在基板的斜面部分上沉积压缩膜; 并且使用末端执行器将其斜面部分被压缩膜覆盖的基板作为最外面的膜传送，同时机械地夹持基板的周边。

公开(公告)号：US12024772B2

公开(公告)日：2024-07-02

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.