- 专利标题： Method and Apparatus for Plasma Dicing a Semi-conductor Wafer
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申请号： US15287501申请日： 2016-10-06
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公开(公告)号： US20170033008A1公开(公告)日： 2017-02-02
- 发明人: Linnell Martinez , David Pays-Volard , Chris Johnson , David Johnson , Russell Westerman , Gordon M. Grivna
- 申请人： Plasma-Therm LLC
- 申请人地址： US FL St. Petersburg
- 专利权人： Plasma-Therm LLC
- 当前专利权人： Plasma-Therm LLC
- 当前专利权人地址： US FL St. Petersburg
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/66 ; H01L21/3065 ; H01L21/306 ; H01L21/683 ; H01L21/67
摘要：
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
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