Invention Application
US20170039103A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR REDUCING SRAM LEAKAGE 有权
集成电路装置及减少SRAM泄漏的方法

  • Patent Title: INTEGRATED CIRCUIT DEVICE AND METHOD FOR REDUCING SRAM LEAKAGE
  • Patent Title (中): 集成电路装置及减少SRAM泄漏的方法
  • Application No.: US14820417
    Application Date: 2015-08-06
  • Publication No.: US20170039103A1
    Publication Date: 2017-02-09
  • Inventor: Nur EnginAjay Kapoor
  • Applicant: NXP B.V.
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Main IPC: G06F11/10
  • IPC: G06F11/10 G11C11/419 G11C29/52
INTEGRATED CIRCUIT DEVICE AND METHOD FOR REDUCING SRAM LEAKAGE
Abstract:
An integrated circuit (IC) device including an SRAM module coupled to wrapper logic is disclosed. The wrapper logic includes an error correction code (ECC) encoder configured to encode input data in accordance with an ECC encoding scheme and output the encoded input data to the SRAM module, an ECC decoder configured to decode output data received from the SRAM module, output the decoded output data, and write decoding information back to the SRAM module, an error controller coupled to the ECC decoder that is configured to control the ECC decoder in accordance with the ECC encoding scheme, and a central controller coupled to the components of the wrapper logic and the SRAM module in order to control operations between the components of the wrapper logic and the SRAM module.
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