Abstract:
An electronic device includes a digital circuit, a power delivery subsystem configured to provide a supply voltage and a body-biasing voltage to the digital circuit, and a controller a controller coupled to the power delivery subsystem. The controller is configured to determine a process parameter for the electronic device, determine a current temperature parameter for the electronic device, concurrently determine a first coarse-grain level for the supply voltage and a second coarse-grain level for the body-biasing voltage based on the process parameter, the current temperature parameter, and a frequency of a clock signal to be supplied to the digital circuit, and to determine a fine-grain level for the supply voltage.
Abstract:
One example discloses an apparatus for charge recycling between a first power-domain operating at a first voltage and a second power-domain operating at a second voltage, including: a first power-delivery circuit configured to supply the first voltage to the first power-domain; and a second power-delivery circuit coupled to receive power from both the first power-delivery circuit and the first power-domain; wherein the second power-delivery circuit is configured to supply the second voltage to the second power-domain.
Abstract:
One example discloses an apparatus for power management, including: a circuit having a first power-domain and a second power-domain; wherein the first and second power-domains include a set of operating parameter values; a circuit controller configured to incrementally sweep at least one of the operating parameter values of the first power-domain; a circuit profiler configured to derive a total power consumption profile of the circuit based on the circuit's response to the swept operating parameter value; wherein the circuit controller sets the operating parameter values for the first and second power-domains based on the total power consumption profile of the circuit.
Abstract:
One example discloses an apparatus for power management, including: a current sink/source sensor configured to monitor a power-supply to inter-power-domain sink/source-current and to generate a current mismatch signal if the power-supply to inter-power-domain sink/source-current exceeds a threshold range; and a current imbalance controller coupled to receive the current mismatch signal and configured to generate a set of power-domain control signals; wherein the set of power-domain control signals reduce an absolute value of the power-supply to inter-power-domain sink/source-current.
Abstract:
An intelligent interrupt distributor balances interrupts (workload) in a highly parallelized system. The intelligent interrupt distributor distributes the interrupts between the processor cores. This allows lowering of voltage and frequency of individual processors and ensures that the overall system power consumption is reduced.
Abstract:
An integrated circuit (IC) device including an SRAM module coupled to wrapper logic is disclosed. The wrapper logic includes an error correction code (ECC) encoder configured to encode input data in accordance with an ECC encoding scheme and output the encoded input data to the SRAM module, an ECC decoder configured to decode output data received from the SRAM module, output the decoded output data, and write decoding information back to the SRAM module, an error controller coupled to the ECC decoder that is configured to control the ECC decoder in accordance with the ECC encoding scheme, and a central controller coupled to the components of the wrapper logic and the SRAM module in order to control operations between the components of the wrapper logic and the SRAM module.
Abstract:
An intelligent interrupt distributor balances interrupts (workload) in a highly parallelized system. The intelligent interrupt distributor distributes the interrupts between the processor cores. This allows lowering of voltage and frequency of individual processors and ensures that the overall system power consumption is reduced.
Abstract:
Self-regulating body-biasing techniques for Process, Voltage, and Temperature (PVT) fluctuation compensation in Fully-Depleted Silicon-on-Insulator (FDSOI) semiconductors are disclosed. In an illustrative, non-limiting embodiment, an electronic device may include a logic cell having a plurality of FDSOI transistors manufactured thereon; and at least one current source coupled to a body terminal of each transistor in a subset of the FDSOI transistors, wherein the current source is configured to output a high-impedance current.
Abstract:
A memory system is disclosed, comprising a primary memory module, a secondary memory module, and a controller. The controller is configured to identify addresses in the primary memory module requiring correction, and is further configured to receive a memory access request identifying an address in the primary memory module. The controller is configured to determine whether the address is identified as requiring correction and, if it is not, to direct the memory access request to the primary memory module. If the address is identified as requiring correction, the controller is configured to direct the memory access request to the secondary memory module.
Abstract:
In accordance with an embodiment of the invention, an integrated circuit (IC) device is disclosed. In the embodiment, the IC device includes an SRAM module, wrapper logic coupled to the SRAM module, a context source, and an ECC profile controller coupled to the context source and to the wrapper logic, the ECC profile controller configured to select an ECC profile in response to context information received from the context source for use by the wrapper logic.