发明申请
- 专利标题: SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题(中): 半导体器件制造方法
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申请号: US15301488申请日: 2014-05-21
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公开(公告)号: US20170040229A1公开(公告)日: 2017-02-09
- 发明人: Takuichiro SHITOMI , Kazuhisa KOGA , Satoshi RITTAKU
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 国际申请: PCT/JP2014/063499 WO 20140521
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L21/3213 ; H01L21/02 ; H01L21/768 ; H01L21/67 ; H01L21/28
摘要:
A semiconductor device manufacturing method includes an element forming step of forming an clement structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength λi to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n−1)λi/8 to (2n+1)λi/8, with n being a positive even number.
公开/授权文献
- US09865513B2 Semiconductor device manufacturing method 公开/授权日:2018-01-09