公开(公告)号：US20190131174A1

公开(公告)日：2019-05-02

申请号：US16095386

申请日：2016-06-30

申请人： Mitsubishi Electric Corporation

发明人： Takuichiro SHITOMI

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/8234 ,  H01L27/088

摘要： An object is to provide a technique for preventing an oxide film from being partly thin. A third oxide film is formed onto a nitride film in a first area; in addition, a fourth oxide film is formed onto a main surface in a second area. The third oxide film, the nitride film, and a first oxide film are removed from the first area using a mask. After the third oxide film, the nitride film, and the first oxide film are removed, a fifth oxide film is formed onto the main surface in the first area. The fifth oxide film is removed from the first area using a mask. After the fifth oxide film is removed, a sixth oxide film is formed onto the main surface in the first area.

公开(公告)号：US20230352232A1

公开(公告)日：2023-11-02

申请号：US18156239

申请日：2023-01-18

申请人： Mitsubishi Electric Corporation

发明人： Yohei TORII ,  Manabu YOSHINO ,  Yasuo YAMAGUCHI ,  Takuichiro SHITOMI ,  Toshihiro IMASAKA

IPC分类号： H01F27/32 ,  H01F41/04 ,  H01F41/12 ,  H01F27/28

CPC分类号： H01F27/323 ,  H01F27/2804 ,  H01F41/041 ,  H01F41/122

摘要： Provided is a coil device having a first coil and a second coil insulated by an insulating film, and deformation of the insulating film is suppressed. A coil device includes: a first insulating film provided in contact with a first direction side of a substrate; a spiral-shaped first coil part provided in contact with a first direction side of the first insulating film; a second insulating film provided to cover a first direction side of the first coil part and the first direction side of the first insulating film where the first coil part is not provided; a spiral-shaped second coil part provided in contact with a first direction side of the second insulating film; and a groove provided on a surface on the first direction side of the second insulating film in a region inside an outer peripheral edge of the second coil part in plan view.

公开(公告)号：US20230275133A1

公开(公告)日：2023-08-31

申请号：US18066902

申请日：2022-12-15

申请人： Mitsubishi Electric Corporation

发明人： Takuichiro SHITOMI ,  Manabu YOSHINO ,  Toshihiro IMASAKA

IPC分类号： H01L29/40

CPC分类号： H01L29/405 ,  H01L29/401

摘要： A resistive field plate is arranged in a spiral shape in plan view so as to gradually approach an inner main electrode from an outer main electrode. The plurality of floating layers are arranged radially toward the low potential region around the high potential region in plan view. The resistive field plate is provided on the plurality of floating layers via an interlayer insulating film, and thus has a floating step reflecting a film thickness of each of the plurality of floating layers. That is, the resistive field plate is provided in such a manner that the floating step is repeatedly generated along the lapping direction.

公开(公告)号：US20170040229A1

公开(公告)日：2017-02-09

申请号：US15301488

申请日：2014-05-21

申请人： Mitsubishi Electric Corporation

发明人： Takuichiro SHITOMI ,  Kazuhisa KOGA ,  Satoshi RITTAKU

IPC分类号： H01L21/66 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/768 ,  H01L21/67 ,  H01L21/28

CPC分类号： H01L22/12 ,  H01L21/02274 ,  H01L21/205 ,  H01L21/28008 ,  H01L21/3213 ,  H01L21/67248 ,  H01L21/76801

摘要： A semiconductor device manufacturing method includes an element forming step of forming an clement structure on a front surface of a substrate and forming a back structure on a back surface of the substrate, and a film forming step of performing film forming on a front surface of the element structure while measuring the temperature of the substrate by using a radiation thermometer that applies infrared rays of a wavelength λi to the back structure to obtain an infrared emissivity of the substrate. The back structure has a first layer exposed to the outside and a second layer in contact with the first layer, the refractive index of the second layer being smaller than that of the first layer, and the layer thickness of the first layer is set in a range from (2n−1)λi/8 to (2n+1)λi/8, with n being a positive even number.

摘要翻译： 半导体器件制造方法包括：元件形成步骤，在基板的前表面上形成元件结构，并在基板的背面形成背面结构;以及成膜步骤，在所述基板的表面上进行成膜 元件结构，同时通过使用将波长λi的红外线施加到背面结构的辐射温度计来测量衬底的温度，以获得衬底的红外发射率。 背面结构具有暴露于外部的第一层和与第一层接触的第二层，第二层的折射率小于第一层的折射率，第一层的层厚度设定为 范围从（2n-1）λi/ 8到（2n + 1）λi/ 8，其中n是正偶数。

公开(公告)号：US20150031208A1

公开(公告)日：2015-01-29

申请号：US14245304

申请日：2014-04-04

申请人： Mitsubishi Electric Corporation

发明人： Takuichiro SHITOMI ,  Yusuke KAWASE ,  Junichi YAMASHITA ,  Manabu YOSHINO

IPC分类号： H01L21/308 ,  H01L21/306

CPC分类号： H01L21/308 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/7624 ,  H01L21/76251

摘要： A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底的顶表面上形成顶表面氮化物膜，并在衬底的底表面上形成底表面的氮化物膜，在顶表面的氮化物膜上形成保护膜， 在顶表面氮化物膜被保护膜保护的同时通过湿法蚀刻去除底面氮化物膜，在除去底面氮化物膜之后去除保护膜，图案化顶表面氮化物膜以形成开口 顶表面氮化物膜，并且在衬底的底表面上形成第二氧化物膜，同时在由开口暴露的衬底的表面部分上形成第一氧化物膜。