Invention Application
- Patent Title: METALLIZATION PROCESS FOR A MEMORY DEVICE
- Patent Title (中): 一种存储器件的金属化过程
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Application No.: US14822326Application Date: 2015-08-10
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Publication No.: US20170047374A1Publication Date: 2017-02-16
- Inventor: Yu Lu , Seung Hyuk KANG
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L23/522 ; G06F17/50 ; H01L23/528 ; H01L43/12 ; H01L43/08
Abstract:
A method of fabrication of a device includes forming a first metallization layer that is coupled to a logic device of the device. The method further includes forming a second metallization layer that is coupled to a magnetoresistive random access memory (MRAM) module of the device. The second metallization layer is independent of the first metallization layer.
Public/Granted literature
- US10109674B2 Semiconductor metallization structure Public/Granted day:2018-10-23
Information query
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