Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE FOR IMPROVING SIGNAL INTEGRITY ISSUE IN CENTER PAD TYPE OF STACKED CHIP STRUCTURE
- Patent Title (中): 用于改善堆芯片结构中心垫类型信号完整性的半导体存储器件
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Application No.: US15207989Application Date: 2016-07-12
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Publication No.: US20170069369A1Publication Date: 2017-03-09
- Inventor: Keung Beum Kim , HyunJong Moon , Heeseok Lee , Seung-Yong Cha
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2015-0125715 20150904
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/4096 ; G11C11/408 ; H01L27/108 ; H01L25/065
Abstract:
A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.
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Information query
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