Abstract:
A semiconductor package includes a first plate having a through hole therein, at least one interconnection layer disposed on a first surface of the first plate, and at least one semiconductor chip disposed on the at least one interconnection layer in a space defined by the through hole and electrically connected to the least one interconnection layer. The package further includes a second plate disposed on the at least one semiconductor chip and a second surface of the first plate on a side of the first plate opposite the first surface, and at least one conductive pad disposed on the second surface of the first plate and electrically connected to the at least one interconnection layer.
Abstract:
Provided is a package substrate and a semiconductor package. The package substrate includes a main body having an upper surface and a lower surface opposite to the upper surface, a plurality of external terminals attached to the lower surface, and a plurality of grooves formed in regions of the lower surface to which the plurality of external terminals is not attached. The semiconductor package includes a package substrate, a semiconductor chip mounted on the upper surface of the semiconductor substrate, and a board providing a region mounted with the package substrate and being mounted with a plurality of mounting elements which are vertically aligned with the plurality of grooves and are inserted into the plurality of grooves.
Abstract:
A wiring board includes a metal core including a first surface and a second surface facing each other and a first portion and a second portion disposed on the first and second surfaces, respectively. The first and second portions each include a plurality of insulating layers and a plurality of wiring layers stacked in an alternating manner. At least one capacitor is disposed in at least one interior region. The at least one capacitor includes first and second electrodes. The at least one interior region exposes a portion of the metal core and a portion of at least one of the first and second portions adjacent to the metal core and at least one first via electrically connects one of the wiring layers of the first portion with the first and second electrodes.
Abstract:
A hybrid semiconductor device includes an interposer substrate, a semiconductor package mounted on the interposer substrate, a molding member on the package substrate covering at least a portion of the semiconductor chip and exposing an upper surface of the semiconductor chip, and a stiffener disposed on an upper surface of the interposer substrate substantially around the semiconductor package.
Abstract:
A semiconductor package includes; a dual stiffener including an upper stiffener and a lower stiffener, an upper package including an upper package substrate, a semiconductor chip centrally mounted on an upper surface of the upper package substrate, and the upper stiffener disposed along an outer edge of the upper package substrate, and a lower package substrate that centrally mounts the upper package and includes the lower stiffener disposed on an upper surface of the lower package substrate to surround the upper package substrate.
Abstract:
A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, an interposer on the lower semiconductor chip, the interposer including a plurality of pieces spaced apart from each other, an upper semiconductor chip on the interposer, and a molding member covering the lower semiconductor chip and the interposer.
Abstract:
A semiconductor chip includes a first core region including a first core and a first power line configured to provide a first voltage to the first core, a second core region including a second core and a second power line configured to provide the first voltage to the second core, a cache region between the first core region and the second core region, the cache region including a cache and a third power line providing a second voltage to the cache, and arranged between the first core region and the second core region; and a first power connection line connecting the first power line to the second power line and arranged in the cache region.
Abstract:
A semiconductor package includes; a lower semiconductor chip mounted on a lower package substrate, an interposer on the lower package substrate and including an opening, connection terminals spaced apart from and at least partially surrounding the lower semiconductor chip and extending between the lower package substrate and the interposer, a first molding member including a first material and covering at least a portion of a top surface of the lower semiconductor chip and at least portions of edge surfaces of the lower semiconductor chip, wherein the first molding member includes a protrusion that extends upward from the opening to cover at least portions of a top surface of the interposer proximate to the opening, and a second molding member including a second material, at least partially surrounding the first molding member, and covering side surfaces of the first molding member and the connection terminals, wherein the first material has thermal conductivity greater than the second material.
Abstract:
A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.
Abstract:
A semiconductor package includes; a lower semiconductor chip mounted on a lower package substrate, an interposer on the lower package substrate and including an opening, connection terminals spaced apart from and at least partially surrounding the lower semiconductor chip and extending between the lower package substrate and the interposer, a first molding member including a first material and covering at least a portion of a top surface of the lower semiconductor chip and at least portions of edge surfaces of the lower semiconductor chip, wherein the first molding member includes a protrusion that extends upward from the opening to cover at least portions of a top surface of the interposer proximate to the opening, and a second molding member including a second material, at least partially surrounding the first molding member, and covering side surfaces of the first molding member and the connection terminals, wherein the first material has thermal conductivity greater than the second material.