发明申请
- 专利标题： METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA
- 专利标题（中）： 铝的化学机械抛光方法
-
申请号： US15341130申请日： 2016-11-02
-
公开(公告)号： US20170072530A1公开(公告)日： 2017-03-16
- 发明人: RAJIV K. SINGH , KANNAN BALASUNDARAM , ARUL CHAKKARAVARTHI ARJUNAN , DEEPIKA SINGH , WEI BAI
- 申请人： SINMAT, INC. , UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- 主分类号： B24B37/20
- IPC分类号： B24B37/20 ; C09G1/02 ; C23F3/00
摘要：
A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size
公开/授权文献
- US09878420B2 Method of chemical mechanical polishing of alumina 公开/授权日：2018-01-30
信息查询
