公开(公告)号：US11213927B2

公开(公告)日：2022-01-04

申请号：US16233943

申请日：2018-12-27

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Rajiv K. Singh ,  Deepika Singh

IPC: B24B53/017 ,  B24B53/12 ,  B24B53/013 ,  B24B53/047 ,  B24B37/04

Abstract: A method of processing chemical mechanical polishing (CMP) pad conditioners includes providing the CMP pad conditioner including conditioner substrate that is a metal, ceramic or a metal-ceramic material with a plurality of hard conditioner particles with a Vickers hardness greater than 3,000 Kg/mm2 bonded to a top surface of the conditioner substrate, and a slurry including an aqueous medium and a plurality of hard slurry particles having a hardness greater than 3,000 Kg/mm2. The surface of the pad conditioner is polished in a CMP apparatus using a polishing pad. After the polishing each conditioner particle has at least one exposed facet, and the plurality of hard conditioner particles have a maximum average protrusion-to-protrusion flatness (PPF) difference of 20 microns, and a sharpest edge measured by a value of a cutting edge radius (CER) that lies at an edge of the facet for at least 80% of the facets.

公开(公告)号：US09218954B2

公开(公告)日：2015-12-22

申请号：US13872821

申请日：2013-04-29

Applicant: Sinmat, Inc.

Inventor： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan

IPC: H01L21/00 ,  H01L21/02 ,  C30B25/18 ,  C30B29/36 ,  H01L21/306 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L21/0201 ,  C30B25/186 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30608 ,  H01L21/30617 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/2003

Abstract: A method for forming an epitaxial layer on a substrate surface having crystalline defect or amorphous regions and crystalline non-defect regions includes preferential polishing or etching the crystalline defect or amorphous regions relative to the crystalline non-defect regions to form a decorated substrate surface having surface recess regions. A capping layer is deposited on the decorated substrate surface to cover the crystalline non-defect regions and to at least partially fill the surface recess regions. The capping layer is patterned by removing the capping layer over the crystalline non-defect regions to form exposed non-defect regions while retaining the capping layer in at least a portion of the surface recess regions. Selective epitaxy is then used to form the epitaxial layer, wherein the capping layer in the surface recess regions restricts epitaxial growth of the epitaxial layer over the surface recess regions.

Abstract translation: 在具有晶体缺陷或非晶区域和晶体非缺陷区域的衬底表面上形成外延层的方法包括相对于晶体非缺陷区域优先抛光或蚀刻晶体缺陷或非晶区域，以形成具有表面的装饰衬底表面 凹陷区域。 覆盖层沉积在装饰的衬底表面上以覆盖晶体非缺陷区域并且至少部分地填充表面凹陷区域。 通过在晶体非缺陷区域上移除覆盖层来形成覆盖层，以形成暴露的非缺陷区域，同时将覆盖层保持在表面凹陷区域的至少一部分中。 然后使用选择性外延形成外延层，其中表面凹陷区域中的覆盖层限制外延层在表面凹陷区域上的外延生长。

公开(公告)号：US20150027981A1

公开(公告)日：2015-01-29

申请号：US14494276

申请日：2014-09-23

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： RAJIV K. SINGH ,  DEEPIKA SINGH ,  ARUL CHAKKARAVARTHI ARJUNAN

IPC: B24B29/02 ,  H01L21/306 ,  H01L21/311 ,  C09G1/02

CPC classification number: B24B29/02 ,  B28D5/00 ,  B32B33/00 ,  C09G1/02 ,  C09K3/1463 ,  C30B29/04 ,  C30B33/00 ,  H01L21/30625 ,  H01L21/31111 ,  H01L21/3212 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  Y10T428/31

Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH≦3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (

Abstract translation: 包含金刚石的表面的化学机械抛光（CMP）的方法包括提供包括多个颗粒，至少一种氧化剂和至少一种酸的浆料，其中所述浆料具有pH = 11或3或pH大于11.至少 多个颗粒的外表面比金刚石表面更软，或者颗粒是平均小于（<）2μm的金刚石颗粒。 金刚石表面相对于抛光垫被压制，其提供肖氏D硬度小于99，其间具有浆料，同时相对于金刚石表面旋转抛光垫，以形成具有均方根（rms）表面粗糙度的光滑金刚石表面 小于15nm。

公开(公告)号：US20190202028A1

公开(公告)日：2019-07-04

申请号：US16233943

申请日：2018-12-27

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： RAJIV K. SINGH ,  DEEPIKA SINGH

IPC: B24B53/017

CPC classification number: B24B53/017 ,  B24B53/12

Abstract: A method of processing chemical mechanical polishing (CMP) pad conditioners includes providing the CMP pad conditioner including conditioner substrate that is a metal, ceramic or a metal-ceramic material with a plurality of hard conditioner particles with a Vickers hardness greater than 3,000 Kg/mm2 bonded to a top surface of the conditioner substrate, and a slurry including an aqueous medium and a plurality of hard slurry particles having a hardness greater than 3,000 Kg/mm2. The surface of the pad conditioner is polished in a CMP apparatus using a polishing pad. After the polishing each conditioner particle has at least one exposed facet, and the plurality of hard conditioner particles have a maximum average protrusion-to-protrusion flatness (PPF) difference of 20 microns, and a sharpest edge measured by a value of a cutting edge radius (CER) that lies at an edge of the facet for at least 80% of the facets.

公开(公告)号：US20170072530A1

公开(公告)日：2017-03-16

申请号：US15341130

申请日：2016-11-02

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

IPC: B24B37/20 ,  C09G1/02 ,  C23F3/00

CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size

Abstract translation: CMP方法使用包含胶体金属氧化物或胶态半导体氧化物颗粒（胶体颗粒）在水中的浆料。 从（i）多分散性> 30％的胶体粒子中选择至少一种粒子特征，和（ii）包含具有平均初级粒径> 50nm的胶体粒子的混合粒子类型与平均一次粒径< 25nm。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。 多分散性通过多分散性公式确定，其分布宽度（w）涉及第二较大粒径的宽度w1和宽度w2。 多分散性公式=（w2-w1）×100 / dav，其含有体积和天数的胶体粒子的总量的63％是胶体粒子的平均粒径。

公开(公告)号：US09551075B2

公开(公告)日：2017-01-24

申请号：US14450885

申请日：2014-08-04

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Rajiv K. Singh ,  Kannan Balasundaram ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Wei Bai

IPC: C23F3/00 ,  C09G1/04 ,  C09G1/02

CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

Abstract translation: CMP方法使用在水中包含第一金属氧化物或半导体氧化物颗粒（第一氧化物颗粒）的浆料。 至少一个颗粒特征选自（i）具有多分散性> 30％的第一氧化物颗粒，（ii）包括第一或第II族离子的第一氧化物颗粒上的涂层，过渡金属氧化物或有机材料，（iii）第一 与煅制氧化物颗粒混合的氧化物颗粒，（iv）平均初级尺寸> 50nm的第一氧化物颗粒与平均初级尺寸<25nm的热解氧化物颗粒混合，和（v）每单位面积的每个表面积的第一氧化物颗粒< 100m 2 / gm与具有平均每单位面积重量> 150m 2 / gm的另一种氧化物颗粒混合。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。

公开(公告)号：US20140000808A1

公开(公告)日：2014-01-02

申请号：US13932724

申请日：2013-07-01

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. ,  SINMAT, INC.

Inventor： RAJIV SINGH ,  DEEPIKA SINGH ,  ABHUDAYA MISHRA

IPC: H01L21/77

CPC classification number: H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.

Abstract translation: 化学机械抛光（CMP）装置包括可操作以执行多步CMP算法的过程控制器，该多步骤CMP算法在第一时间段内在压板上将第一化学成分递送到晶片表面上，并且不从压板移除晶片， 将不同于第一化学成分的第二化学成分输送到晶片表面上持续第二时间。 使用在第一持续时间期间使用包含第一化学成分的浆料或在第二持续时间期间的第二化学成分的抛光垫与抛光垫接触的CMP进行CMP，以及不抛光抛光垫与第二化学成分接触的非抛光工艺 在另一个持续时间期间使用第一和第二化学成分中的另一个的晶片表面，并且重复在晶片上多次处理多步CMP。

公开(公告)号：US20190010356A1

公开(公告)日：2019-01-10

申请号：US15645777

申请日：2017-07-10

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： RAJIV K. SINGH ,  ARUL ARJUNAN ,  DEEPIKA SINGH ,  CHAITANYA GINDE ,  PUNEET N. JAWALI

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

Abstract: A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness 1,000 kg/mm2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

公开(公告)号：US09259819B2

公开(公告)日：2016-02-16

申请号：US14494276

申请日：2014-09-23

Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Rajiv K. Singh ,  Deepika Singh ,  Arul Chakkaravarthi Arjunan

IPC: B24B29/02 ,  B32B33/00 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  C09G1/02 ,  H01L21/311 ,  B28D5/00 ,  C30B29/04 ,  C30B33/00 ,  H01L29/16 ,  H01L29/20

CPC classification number: B24B29/02 ,  B28D5/00 ,  B32B33/00 ,  C09G1/02 ,  C09K3/1463 ,  C30B29/04 ,  C30B33/00 ,  H01L21/30625 ,  H01L21/31111 ,  H01L21/3212 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  Y10T428/31

Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH≦3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (

Abstract translation: 包含金刚石的表面的化学机械抛光（CMP）的方法包括提供包括多个颗粒，至少一种氧化剂和至少一种酸的浆料，其中所述浆料具有pH = 11或3或pH大于11.至少 多个颗粒的外表面比金刚石表面更软，或者颗粒是平均小于（<）2μm的金刚石颗粒。 金刚石表面相对于抛光垫被压制，其提供肖氏D硬度小于99，其间具有浆料，同时相对于金刚石表面旋转抛光垫，以形成具有均方根（rms）表面粗糙度的光滑金刚石表面 小于15nm。

公开(公告)号：US08652295B2

公开(公告)日：2014-02-18

申请号：US13932724

申请日：2013-07-01

Applicant: Sinmat, Inc. ,  University of Florida Research Foundation, Inc.

Inventor： Rajiv Singh ,  Deepika Singh ,  Abhudaya Mishra

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.

Abstract translation: 化学机械抛光（CMP）装置包括可操作以执行多步CMP算法的过程控制器，该多步骤CMP算法在第一时间段内在压板上将第一化学成分递送到晶片表面上，并且不从压板移除晶片， 将不同于第一化学成分的第二化学成分输送到晶片表面上持续第二时间。 使用在第一持续时间期间使用包含第一化学成分的浆料或在第二持续时间期间的第二化学成分的抛光垫与抛光垫接触的CMP进行CMP，以及不抛光抛光垫与第二化学成分接触的非抛光工艺 在另一个持续时间期间使用第一和第二化学成分中的另一个的晶片表面，并且重复在晶片上多次处理多步CMP。