公开(公告)号：US12051621B2

公开(公告)日：2024-07-30

申请号：US17825405

申请日：2022-05-26

申请人： ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

发明人： Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC分类号： H01L21/768 ,  B24B37/04 ,  B81B7/00 ,  B81C1/00 ,  C23F3/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/00 ,  C23F1/18 ,  H01L23/522 ,  H01L25/065

CPC分类号： H01L21/76868 ,  B24B37/042 ,  B81B7/0006 ,  B81C1/00095 ,  C23F3/00 ,  H01L21/30625 ,  H01L21/31111 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76883 ,  H01L24/80 ,  H01L24/81 ,  C23F1/18 ,  H01L21/76898 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/80031 ,  H01L2224/80895 ,  H01L2225/06506 ,  H01L2225/06524 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/1433 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014

摘要： Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

公开(公告)号：US20210087431A1

公开(公告)日：2021-03-25

申请号：US17024766

申请日：2020-09-18

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Liqing Wen ,  Bin Hu ,  Tawei Lin

IPC分类号： C09G1/02 ,  C23F3/00

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.

公开(公告)号：US10421884B2

公开(公告)日：2019-09-24

申请号：US15396325

申请日：2016-12-30

申请人： NITTA HAAS INCORPORATED

发明人： Rika Tanaka

IPC分类号： H01L21/302 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/321 ,  C09K3/14 ,  C23F3/00

摘要： A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

公开(公告)号：US20180358549A1

公开(公告)日：2018-12-13

申请号：US16103477

申请日：2018-08-14

申请人： Micron Technology, Inc.

发明人： Michael Bernhardt ,  Tony Lindenberg ,  Wenzhe Zhang ,  Douglas Capson

IPC分类号： H01L45/00 ,  C23F3/00 ,  H01L27/24 ,  G11C13/00 ,  H01L23/528

摘要： Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

公开(公告)号：US20180138400A1

公开(公告)日：2018-05-17

申请号：US15855657

申请日：2017-12-27

申请人： Micron Technology, Inc.

发明人： Michael Bernhardt ,  Tony Lindenberg ,  Wenzhe Zhang ,  Douglas Capson

IPC分类号： H01L45/00 ,  C23F3/00 ,  H01L27/24 ,  G11C13/00 ,  H01L23/528

CPC分类号： H01L45/06 ,  C23F3/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/005 ,  G11C2013/0078 ,  G11C2213/71 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

摘要： Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

公开(公告)号：US20170320189A1

公开(公告)日：2017-11-09

申请号：US15473039

申请日：2017-03-29

申请人： YTDIAMOND CO.,LTD

发明人： YING-TUNG CHEN

IPC分类号： B24B37/22 ,  C23F3/00 ,  B24B57/02

CPC分类号： B24B37/22 ,  B24B57/02 ,  C23F3/00

摘要： The present disclosure discloses a chemical mechanical polishing apparatus including a polishing machine platform, an electrode film, a polishing pad and a wafer carrier. The electrode film has a first single electrode structure and is disposed on the polishing machine platform. The polishing pad is disposed on the electrode film. The wafer carrier is disposed on the polishing machine platform. In particular, the first single electrode structure generates a first homopolar electric field on the polishing pad.

公开(公告)号：US20170263862A1

公开(公告)日：2017-09-14

申请号：US15068185

申请日：2016-03-11

申请人： Micron Technology, Inc.

发明人： Michael Bernhardt ,  Tony Lindenberg ,  Wenzhe Zhang ,  Douglas Capson

IPC分类号： H01L45/00 ,  H01L27/24 ,  H01L23/528 ,  C23F3/00 ,  G11C13/00

CPC分类号： H01L45/06 ,  C23F3/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/005 ,  G11C2013/0078 ,  G11C2213/71 ,  H01L23/528 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

摘要： Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

公开(公告)号：US09754800B2

公开(公告)日：2017-09-05

申请号：US15137754

申请日：2016-04-25

申请人： Applied Materials, Inc.

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/32136

摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

公开(公告)号：US20170022391A1

公开(公告)日：2017-01-26

申请号：US15205684

申请日：2016-07-08

申请人： K.C. Tech Co., Ltd.

发明人： Dong Kyu CHOI ,  Young Ho YOON ,  Hyun Goo KONG ,  Jin Sook HWANG ,  Han Teo PARK

IPC分类号： C09G1/02 ,  C23F3/00

CPC分类号： C09G1/02 ,  C23F3/06

摘要： A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.

摘要翻译： 提供抛光浆料组合物。 抛光浆料组合物包括第一磨料颗粒，第二磨料颗粒和第三磨料颗粒中的至少两种磨料颗粒和氧化剂。 当磨料颗粒和含钨膜之间的接触面积增加时，峰 - 谷粗糙度Rpv降低。

公开(公告)号：US09034200B2

公开(公告)日：2015-05-19

申请号：US12523956

申请日：2008-01-22

申请人： Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

发明人： Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

IPC分类号： B44C1/22 ,  C03C25/68 ,  C03C15/00 ,  C23F1/00 ,  C23F3/00 ,  H01L29/16 ,  C23C16/27 ,  C30B25/10 ,  C30B25/20 ,  C30B29/04 ,  G01N27/30 ,  H01L21/02 ,  H01L21/04 ,  H01L29/04 ,  H01L29/167 ,  H01L29/36

CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

摘要： The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.

摘要翻译： 本发明涉及一种制造金刚石表面的方法，包括以下步骤：提供原始金刚石表面，使原始金刚石表面进行等离子体蚀刻以从原始表面去除至少2nm的材料并产生等离子体蚀刻表面， 蚀刻表面的蚀刻表面的最大深度被去除的位置处的等离子体蚀刻表面的粗糙度Rq满足以下条件中的至少一个：等离子体蚀刻表面的Rq小于原件的Rq的粗糙度的1.5倍 等离子体蚀刻表面的表面或Rq小于1nm。