Invention Application
- Patent Title: FIN ISOLATION ON A BULK WAFER
- Patent Title (中): 大容量散热器上的FIN隔离
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Application No.: US14851838Application Date: 2015-09-11
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Publication No.: US20170076992A1Publication Date: 2017-03-16
- Inventor: Hong He , Juntao Li , Junli Wang , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L21/306
Abstract:
A method for forming a semiconductor device includes etching first fins into a bulk semiconductor substrate and exposing a portion of the first fins through a first dielectric layer formed over the first fins. A first film is deposited over the first fins in a region for n-type devices, and a second film is deposited over the first fins in a region for p-type devices. The first film and the second film are etched to form second fins in the regions for n-type devices and for the region for p-type devices. The second fins are protected. The first fins are removed from the first dielectric layer to form an isolation layer separating the second fins from the substrate.
Public/Granted literature
- US09601386B1 Fin isolation on a bulk wafer Public/Granted day:2017-03-21
Information query
IPC分类:
