Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (PD_L, PD_R) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (PD_L) and at least a part of a lower region of the second photoelectric conversion element (PD_R) in a depth direction of the semiconductor substrate.