公开(公告)号：US20170187969A1

公开(公告)日：2017-06-29

申请号：US15378223

申请日：2016-12-14

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya KITAMORI ,  Fumihide MURAO ,  Kyoji YAMASAKI

IPC: H04N5/357 ,  H01L27/146 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/357 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N5/347 ,  H04N5/3696 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378

Abstract: A related art imaging device is accompanied by the problem that it must perform read processing on pixel data generated within pixel units for every row, and an SN ratio of the pixel data is not capable of being enhanced sufficiently. According to one embodiment, an imaging device has common floating diffusion wirings and floating diffusion switches which switch whether or not to couple floating diffusions of a plurality of pixel units arranged in a column direction, and combines pixel data generated by the pixel units in the floating diffusions coupled within the pixel units.

公开(公告)号：US20170077166A1

公开(公告)日：2017-03-16

申请号：US15218257

申请日：2016-07-25

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya KITAMORI ,  Kyoji YAMASAKI ,  Katsumi EIKYU

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14641

Abstract: Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (PD_L, PD_R) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (PD_L) and at least a part of a lower region of the second photoelectric conversion element (PD_R) in a depth direction of the semiconductor substrate.

Abstract translation: 相关技术的图像传感器装置存在由于在一个微透镜之下形成的多个光电二极管之间的电子的串扰而导致自动聚焦精度劣化的问题。 根据一个实施例，图像传感器装置中的多个像素中的至少一些像素包括：形成在低于一微透镜（45）的半导体衬底上的第一和第二光电转换元件（PD_L，PD_R）; 以及阻止在第一光电转换元件（PD_L）的下部区域的至少一部分与第二光电转换元件（PD_R）的下部区域的至少一部分之间的电荷的转移的势垒（34） 半导体衬底的深度方向。