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公开(公告)号：US20170077166A1
公开(公告)日：2017-03-16
申请号：US15218257
申请日：2016-07-25
Applicant: Renesas Electronics Corporation
Inventor： Tatsuya KITAMORI , Kyoji YAMASAKI , Katsumi EIKYU
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14641
Abstract: Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (PD_L, PD_R) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (PD_L) and at least a part of a lower region of the second photoelectric conversion element (PD_R) in a depth direction of the semiconductor substrate.
Abstract translation: 相关技术的图像传感器装置存在由于在一个微透镜之下形成的多个光电二极管之间的电子的串扰而导致自动聚焦精度劣化的问题。 根据一个实施例，图像传感器装置中的多个像素中的至少一些像素包括：形成在低于一微透镜（45）的半导体衬底上的第一和第二光电转换元件（PD_L，PD_R）; 以及阻止在第一光电转换元件（PD_L）的下部区域的至少一部分与第二光电转换元件（PD_R）的下部区域的至少一部分之间的电荷的转移的势垒（34） 半导体衬底的深度方向。
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Patent Agency Ranking
公开(公告)号：US20160227143A1
公开(公告)日：2016-08-04
申请号：US14961630
申请日：2015-12-07
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tatsuya KITAMORI , Katsumi DOSAKA , Fumihide MURAO
CPC classification number: G02B7/365 , G02B7/30 , H01L27/14627 , H04N5/3696 , H04N5/3742 , H04N5/37457
Abstract: In an image sensor according to related art, charge information cannot be read at the same time from a pair of photoelectric conversion elements placed corresponding to one microlens. According to one embodiment, an image sensor includes a first photoelectric conversion element and a second photoelectric conversion element placed corresponding to one microlens, a first transfer transistor placed corresponding to the first photoelectric conversion element and a second transfer transistor placed corresponding to the second photoelectric conversion element, a read timing signal line that supplies a common read timing signal to the first transfer transistor and the second transfer transistor, a first output line that outputs a signal of the first photoelectric conversion element to the outside, and a second output line that outputs a signal of the second photoelectric conversion element to the outside.
Abstract translation: 在根据现有技术的图像传感器中，不能同时从对应于一个微透镜放置的一对光电转换元件读取电荷信息。 根据一个实施例，图像传感器包括对应于一个微透镜放置的第一光电转换元件和第二光电转换元件，对应于第一光电转换元件放置的第一转移晶体管和与第二光电转换相对应放置的第二转移晶体管 元件，向第一传输晶体管和第二传输晶体管提供公共读定时信号的读定时信号线，将第一光电转换元件的信号输出到外部的第一输出线和输出 第二光电转换元件的信号到外部。
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公开(公告)号：US20170280083A1
公开(公告)日：2017-09-28
申请号：US15470045
申请日：2017-03-27
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Ryota OTAKE , Tatsuya KITAMORI
CPC classification number: H04N5/378 , H04N5/353 , H04N5/35545 , H04N5/3696
Abstract: In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.
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公开(公告)号：US20180054578A1
公开(公告)日：2018-02-22
申请号：US15597312
申请日：2017-05-17
Applicant: Renesas Electronics Corporation
Inventor： Tatsuya KITAMORI , Fumiyasu SASAKI , Fumihide MURAO
CPC classification number: H04N5/361 , H04N5/23245 , H04N5/347 , H04N5/3696 , H04N5/3742 , H04N5/37457 , H04N5/3765 , H04N5/378
Abstract: To solve the problem of conventional image sensing devices that require much time for reading pixel signals, an image sensing device according to an embodiment includes a first pixel unit coupled to a first vertical read line, a second pixel unit coupled to a second vertical read line and placed in the column of the first pixel unit, a first transfer switch provided at an end of the first read line, and a second transfer switch provided at an end of the second read line. When the first transfer switch is controlled to be closed and the second transfer switch is controlled to be conductive, the image sensing device performs a reset process of the vertical read line by a dark level signal output from the second pixel unit, and a conversion process of the dark level read from the first pixel unit, and the pixel signal into digital values.
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公开(公告)号：US20180149831A1
公开(公告)日：2018-05-31
申请号：US15884726
申请日：2018-01-31
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Tatsuya KITAMORI , Katsumi DOSAKA , Fumihide MURAO
IPC: G02B7/36 , H04N5/3745 , H04N5/374 , G02B7/30 , H01L27/146 , H04N5/369
CPC classification number: G02B7/365 , G02B7/30 , H01L27/14627 , H04N5/3696 , H04N5/3742 , H04N5/37457
Abstract: In an image sensor according to related art, charge information cannot be read at the same time from a pair of photoelectric conversion elements placed corresponding to one microlens. According to one embodiment, an image sensor includes a first photoelectric conversion element and a second photoelectric conversion element placed corresponding to one microlens, a first transfer transistor placed corresponding to the first photoelectric conversion element and a second transfer transistor placed corresponding to the second photoelectric conversion element, a read timing signal line that supplies a common read timing signal to the first transfer transistor and the second transfer transistor, a first output line that outputs a signal of the first photoelectric conversion element to the outside, and a second output line that outputs a signal of the second photoelectric conversion element to the outside.
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公开(公告)号：US20170187969A1
公开(公告)日：2017-06-29
申请号：US15378223
申请日：2016-12-14
Applicant: Renesas Electronics Corporation
Inventor： Tatsuya KITAMORI , Fumihide MURAO , Kyoji YAMASAKI
IPC: H04N5/357 , H01L27/146 , H04N5/376 , H04N5/378
CPC classification number: H04N5/357 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H04N5/347 , H04N5/3696 , H04N5/37457 , H04N5/3765 , H04N5/378
Abstract: A related art imaging device is accompanied by the problem that it must perform read processing on pixel data generated within pixel units for every row, and an SN ratio of the pixel data is not capable of being enhanced sufficiently. According to one embodiment, an imaging device has common floating diffusion wirings and floating diffusion switches which switch whether or not to couple floating diffusions of a plurality of pixel units arranged in a column direction, and combines pixel data generated by the pixel units in the floating diffusions coupled within the pixel units.
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