Invention Application
- Patent Title: FORMING REPLACEMENT LOW-K SPACER IN TIGHT PITCH FIN FIELD EFFECT TRANSISTORS
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Application No.: US14879968Application Date: 2015-10-09
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Publication No.: US20170104082A1Publication Date: 2017-04-13
- Inventor: XIUYU CAI , CHUN-CHEN YEH , QING LIU , RUILONG XIE
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC. , STMicroelectronics, Inc.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/31 ; H01L29/51 ; H01L21/768 ; H01L29/78 ; H01L21/311 ; H01L21/283
Abstract:
A semiconductor device that a fin structure, and a gate structure present on a channel region of the fin structure. A composite spacer is present on a sidewall of the gate structure including an upper portion having a first dielectric constant, a lower portion having a second dielectric constant that is less than the first dielectric constant, and an etch barrier layer between sidewalls of the first and second portion of the composite spacer and the gate structure. The etch barrier layer may include an alloy including at least one of silicon, boron and carbon.
Information query
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