Invention Application
- Patent Title: METHOD OF CLEANING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US15237646Application Date: 2016-08-16
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Publication No.: US20170110316A1Publication Date: 2017-04-20
- Inventor: Mi-hyun PARK , Jung-min OH , Kyoung-hwan KIM , In-gi KIM , Hyo-san LEE , Ji-hoon JEONG , Kyoung-seob KIM , Seok-hoon KIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2015-0144740 20151016
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L29/161 ; H01L29/16 ; C11D11/00 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; C11D1/29 ; H01L29/78 ; H01L29/08
Abstract:
A method of cleaning a substrate includes providing the substrate, the substrate including a metal material film, performing physical cleaning of the substrate, performing chemical cleaning of the substrate, and drying a surface of the substrate. Performing the chemical cleaning includes supplying a chemical cleaning solution including an anionic surfactant at a concentration that is equal to or greater than a critical micelle concentration (CMC) onto the surface of the substrate.
Information query
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