Invention Application
- Patent Title: CRACK-TOLERANT PHOTOVOLTAIC CELL STRUCTURE AND FABRICATION METHOD
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Application No.: US14936900Application Date: 2015-11-10
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Publication No.: US20170133523A1Publication Date: 2017-05-11
- Inventor: Bahman Hekmatshoartabari , Ning Li , Katherine L. Saenger
- Applicant: International Business Machines Corporation
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/18 ; H01L31/028 ; H01L31/0224 ; H01L31/075

Abstract:
After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.
Public/Granted literature
- US09705013B2 Crack-tolerant photovoltaic cell structure and fabrication method Public/Granted day:2017-07-11
Information query
IPC分类: