A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.