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公开(公告)号：US11557724B2
公开(公告)日：2023-01-17
申请号：US17480248
申请日：2021-09-21
发明人： Takashi Ando , Praneet Adusumilli , Jianshi Tang , Reinaldo Vega
摘要： A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a first thermal conducting layer over a bottom electrode, depositing a metal oxide liner over the first thermal conducting layer, forming a second thermal conducting layer over the metal oxide liner, recessing the second thermal conducting layer to expose the first thermal conducting layer, and forming a top electrode in direct contact with the first and second thermal conducting layers.
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公开(公告)号：US11455521B2
公开(公告)日：2022-09-27
申请号：US16290585
申请日：2019-03-01
发明人： Teodor K. Todorov , Douglas M. Bishop , Jianshi Tang , John Rozen
摘要： A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.
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公开(公告)号：US20210242402A1
公开(公告)日：2021-08-05
申请号：US17233968
申请日：2021-04-19
发明人： Jianshi Tang , Takashi Ando , Reinaldo Vega , Praneet Adusumilli
摘要： Devices with settable resistance and methods of forming the same include forming vertical dielectric structures from heterogeneous dielectric materials on a first electrode. A second electrode is formed on the vertical dielectric structures.
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公开(公告)号：US20210151669A1
公开(公告)日：2021-05-20
申请号：US17132703
申请日：2020-12-23
发明人： Teodor K. Todorov , Douglas M. Bishop , Jianshi Tang , John Rozen
摘要： Methods of forming variable-resistance devices include forming a variable-resistance layer between a first terminal and a second terminal from a material that varies in resistance based on an oxygen concentration. An electrolyte layer is formed over the variable-resistance layer from a material that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. A conductive gate layer is formed over the electrolyte layer.
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公开(公告)号：US10915811B1
公开(公告)日：2021-02-09
申请号：US16575380
申请日：2019-09-18
发明人： Takashi Ando , Jianshi Tang , Praneet Adusumilli , Reinaldo Vega
摘要： An electro-chemical random-access memory (ECRAM) cell includes a substrate and a plurality of source-drain pairs positioned on a top surface of the substrate, each source-drain pair comprising a source and a drain. A channel at least partially overlays the substrate and the plurality of source-drain pairs, and a transfer layer at least partially overlays the channel. A gate at least partially overlays the transfer layer, the gate at least partially controlling a channel between each source-drain pair.
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公开(公告)号：US20200343448A1
公开(公告)日：2020-10-29
申请号：US16394305
申请日：2019-04-25
发明人： Takashi Ando , Praneet Adusumilli , Jianshi Tang , Reinaldo Vega
摘要： A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a first thermal conducting layer over a bottom electrode, depositing a metal oxide liner over the first thermal conducting layer, forming a second thermal conducting layer over the metal oxide liner, recessing the second thermal conducting layer to expose the first thermal conducting layer, and forming a top electrode in direct contact with the first and second thermal conducting layers.
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公开(公告)号：US10777741B2
公开(公告)日：2020-09-15
申请号：US16666471
申请日：2019-10-29
发明人： Qing Cao , Jianshi Tang , Ning Li
IPC分类号： H01L21/8238 , H01L45/00
摘要： A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
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公开(公告)号：US20200136034A1
公开(公告)日：2020-04-30
申请号：US16666471
申请日：2019-10-29
发明人： Qing Cao , Jianshi Tang , Ning Li
IPC分类号： H01L45/00
摘要： A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
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公开(公告)号：US10586864B2
公开(公告)日：2020-03-10
申请号：US16055128
申请日：2018-08-05
发明人： Jianshi Tang , Qing Cao
IPC分类号： H01L29/78 , H01L29/66 , H01L21/285 , H01L21/8234 , H01L21/308 , H01L29/417
摘要： A vertical transistor and a method of creating thereof are provided. A substrate is provided. A first electrode, comprising a two-dimensional (2D) material, is defined on top of the substrate. A spacer is deposited on top of the first electrode. A second electrode, comprising a 2D material, is defined on top of the spacer. A mask layer is formed on top of the second electrode. A channel is formed on top of the mask layer. A gate dielectric layer is provided on top of the channel. A gate coupled to the second portion of the gate dielectric is provided.
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公开(公告)号：US20200044082A1
公开(公告)日：2020-02-06
申请号：US16055128
申请日：2018-08-05
发明人： Jianshi Tang , Qing Cao
IPC分类号： H01L29/78 , H01L29/66 , H01L29/417 , H01L21/8234 , H01L21/308 , H01L21/285
摘要： A vertical transistor and a method of creating thereof are provided. A substrate is provided. A first electrode, comprising a two-dimensional (2D) material, is defined on top of the substrate. A spacer is deposited on top of the first electrode. A second electrode, comprising a 2D material, is defined on top of the spacer. A mask layer is formed on top of the second electrode. A channel is formed on top of the mask layer. A gate dielectric layer is provided on top of the channel. A gate coupled to the second portion of the gate dielectric is provided.
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