Invention Application
- Patent Title: SPECIAL CONSTRUCT FOR CONTINUOUS NON-UNIFORM ACTIVE REGION FINFET STANDARD CELLS
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Application No.: US15420967Application Date: 2017-01-31
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Publication No.: US20170141109A1Publication Date: 2017-05-18
- Inventor: Navneet JAIN , Juhan KIM , Andy NGUYEN , Mahbub RASHED
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8238 ; H01L29/66 ; H01L27/02 ; H01L29/08 ; H01L21/8234 ; H01L23/528

Abstract:
Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.
Public/Granted literature
- US09893063B2 Special construct for continuous non-uniform active region FinFET standard cells Public/Granted day:2018-02-13
Information query
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