A method performed in a data storage device includes reading first representations of data from a non-volatile memory according to multiple sets of read voltages. A first set of read voltages are selected based on the first representations. The method also include generating reliability information that is based on a first generated representation of the data and a second generated representation of the data. The first generated representation of the data corresponds to reading the data from the non-volatile memory according to the first set of read voltages, and the second generated representation of the data corresponds to reading the data from the non-volatile memory according to a second set of read voltages that are offset from the first set of read voltages.