Provided are a light emitting device having a nitride quantum dot and a method of manufacturing the same. The light emitting device may include: a substrate; a nitride-based buffer layer arranged on the substrate; a plurality of nanorod layers arranged on the nitride-based buffer layer in a vertical direction and spaced apart from each other; a nitride quantum dot arranged on each of the plurality of nanorod layers; and a top contact layer covering the plurality of nanorod layers and the nitride quantum dots. A pyramid-shaped material layer may be further included between each of the plurality of nanorod layers and each of the nitride quantum dots. One or the plurality of nitride quantum dots may be arranged on each of the nanorod layers.