Invention Application
- Patent Title: THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL
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Application No.: US15127207Application Date: 2014-06-27
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Publication No.: US20170155004A1Publication Date: 2017-06-01
- Inventor: KINYIP PHOA , NIDHI NIDHI , CHIA-HONG JAN , WALID M. HAFEZ , YI WEI CHEN
- Applicant: Intel Corporation
- International Application: PCT/US2014/044550 WO 20140627
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H02S40/38 ; H01L31/18 ; H01L31/028 ; H01L31/05 ; H01L31/056 ; H01L31/068

Abstract:
An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.
Public/Granted literature
- US10158034B2 Through silicon via based photovoltaic cell Public/Granted day:2018-12-18
Information query
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