Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
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Application No.: US15439890Application Date: 2017-02-22
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Publication No.: US20170162389A1Publication Date: 2017-06-08
- Inventor: Kuang-Hsiu Chen , Yi-Liang Ye , Chueh-Yang Liu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L29/66 ; H01L29/78 ; H01L29/24 ; H01L29/267 ; H01L29/08 ; H01L21/02 ; H01L21/8238
Abstract:
A method for fabricating the semiconductor device is disclosed. A semiconductor substrate having a main surface is provided. A gate is formed on the main surface of the semiconductor substrate. An offset liner is formed on the sidewall of the gate. An ion implantation process is performed to form lightly doped drain (LDD) region in the semiconductor substrate. A spacer is formed on a sidewall of the gate. A cavity is recessed into the main surface of the semiconductor substrate. The cavity is adjacent to the spacer. An epitaxial layer is grown in the cavity. The spacer is then subjected to a surface treatment to form a dense oxide film on the spacer. A mask layer is deposited on the dense oxide film. The dense oxide film has a thickness that is smaller or equal to 12 angstroms.
Public/Granted literature
- US10312084B2 Semiconductor device and fabrication method thereof Public/Granted day:2019-06-04
Information query
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